BTC3906S3 Specs and Replacement

Type Designator: BTC3906S3

SMD Transistor Code: G1

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 180 V

Maximum Collector-Emitter Voltage |Vce|: 160 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 6 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT323

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BTC3906S3 datasheet

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BTC3906S3

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BTC3906S3

Spec. No. C208N3G Issued Date 2002.05.11 CYStech Electronics Corp. Revised Date 2013.05.08 Page No. 1/7 General Purpose NPN Epitaxial Planar Transistor BTC3906N3 Description The BTC3906N3 is designed for general purpose applications requiring high breakdown voltage. Features High collector-emitter breakdown voltage. (BV =160V @ I =1mA) CEO C Complement to B... See More ⇒

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 btc3906l3.pdf pdf_icon

BTC3906S3

Spec. No. C208L3 Issued Date 2004.09.21 CYStech Electronics Corp. Revised Date 2013.10.25 Page No. 1/8 General Purpose NPN Epitaxial Planar Transistor BTC3906L3 Features High collector-emitter breakdown voltage. (BV =160V @ I =1mA) CEO C Complement to BTA1514L3. Pb-free lead plating and halogen-free package. Symbol Outline BTC3906L3 SOT-223 C E ... See More ⇒

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BTC3906S3

Spec. No. C208M3 Issued Date 2003.08.18 CYStech Electronics Corp. Revised Date 2013.08.05 Page No. 1/7 General Purpose NPN Epitaxial Planar Transistor BTC3906M3 Description The BTC3906M3 is designed for general purpose applications requiring high breakdown voltage. Features High collector-emitter breakdown voltage. (BV =160V @ I =1mA) CEO C Complement to BTA... See More ⇒

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Detailed specifications: BTC3149E3, BTC3356N3, BTC3415A3, BTC3838N3, BTC3906L3, BTC3906M3, BTC3906N3, BTC3906N3G, D880, BTC4061N3, BTC4081S3, BTC4082S3, BTC4083S3, BTC4226S3, BTC4401A3, BTC4505A3, BTC4505M3

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