BTC4505M3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTC4505M3
SMD Transistor Code: 3D
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 500 V
Maximum Collector-Emitter Voltage |Vce|: 400 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 20 MHz
Collector Capacitance (Cc): 7 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT89
BTC4505M3 Transistor Equivalent Substitute - Cross-Reference Search
BTC4505M3 Datasheet (PDF)
btc4505m3.pdf
Spec. No. : C210M3 Issued Date : 2003.05.15 CYStech Electronics Corp.Revised Date :2013.08.06 Page No. : 1/6 High Voltage NPN Epitaxial Planar Transistor BTC4505M3 Features High breakdown voltage, BV =400V. CEO (min) Low saturation voltage, typically V (sat) =0.14V at I /I 50mA/5mA. CE C B= Complementary to BTA1759M3. Pb-free package. Symbol Outline B
btc4505a3.pdf
Spec. No. : C210A3-R Issued Date : 2003.10.15 CYStech Electronics Corp.Revised Date :2007.11.22 Page No. : 1/4 High Voltage NPN Epitaxial Planar Transistor BTC4505A3 Features High breakdown voltage. (BV = 400V) CEO Low saturation voltage, typically V (sat) = 0.1V at I / I 10mA / 1mA. CE C B= Complementary to BTA1759A3 RoHS compliant package Symbol Outl
btc4505n3.pdf
Spec. No. : C210N3 Issued Date : 2003.05.09 CYStech Electronics Corp.Revised Date : 2010.10.19 Page No. : 1/6 High Voltage NPN Epitaxial Planar Transistor BVCEO 400VIC 0.3ABTC4505N3 VCESAT(TYP) 0.1VFeatures High breakdown voltage. (BV =400V) CEO Low saturation voltage, typically V (sat) =0.1V at I /I 10mA/1mA. CE C B= Complementary to BTA1759N3 Pb-
Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2222A , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
History: FZT658
