BTC5658Y3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTC5658Y3
SMD Transistor Code: BR_BS
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 180 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 180
Noise Figure, dB: -
Package: SOT723
BTC5658Y3 Transistor Equivalent Substitute - Cross-Reference Search
BTC5658Y3 Datasheet (PDF)
btc5658y3.pdf
Spec. No. : C204Y3 Issued Date : 2011.11.03 CYStech Electronics Corp.Revised Date : 2014.06.18 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BTC5658Y3Description The BTC5658Y3 is designed for use in driver stage of AF amplifier and low speed switching. Complementary to BTA2029Y3. Pb-free lead plating and halogen-free package. Symbol Outline
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .