BTC9013A3 Specs and Replacement
Type Designator: BTC9013A3
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 75 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 5.4 pF
Forward Current Transfer Ratio (hFE), MIN: 144
Package: TO92
BTC9013A3 Substitution
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BTC9013A3 datasheet
Spec. No. C203A3 Issued Date 2014.02.17 CYStech Electronics Corp. Revised Date 2014.02.24 Page No. 1/8 General Purpose NPN Epitaxial Planar Transistor BTC9013A3 Description The BTC9013A3 is designed for using in driver stage of AF amplifier and general purpose switching application. High current , I = 0.6A C Low V , V = 50mV(typ.) at I /I = 100mA/10mA,... See More ⇒
Spec. No. C202A3 Issued Date 2008.01.16 CYStech Electronics Corp. Revised Date Page No. 1 / 4 General Purpose NPN Epitaxial Planar Transistor BTC9014A3 Description The BTC9014A3 is designed for use in pre-amplifier of low level and low noise. Complementary to BTA9015A3. Pb-free package Symbol Outline BTC9014A3 TO-92 B Base C Collector E Emi... See More ⇒
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