BTC9013A3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTC9013A3
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 75 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 140 MHz
Collector Capacitance (Cc): 5.4 pF
Forward Current Transfer Ratio (hFE), MIN: 144
Noise Figure, dB: -
Package: TO92
BTC9013A3 Transistor Equivalent Substitute - Cross-Reference Search
BTC9013A3 Datasheet (PDF)
btc9013a3.pdf
Spec. No. : C203A3 Issued Date : 2014.02.17 CYStech Electronics Corp.Revised Date : 2014.02.24 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor BTC9013A3Description The BTC9013A3 is designed for using in driver stage of AF amplifier and general purpose switching application. High current , I = 0.6A C Low V , V = 50mV(typ.) at I /I = 100mA/10mA,
btc9014a3.pdf
Spec. No. : C202A3 Issued Date : 2008.01.16 CYStech Electronics Corp.Revised Date : Page No. : 1 / 4 General Purpose NPN Epitaxial Planar Transistor BTC9014A3Description The BTC9014A3 is designed for use in pre-amplifier of low level and low noise. Complementary to BTA9015A3. Pb-free package Symbol Outline BTC9014A3 TO-92 BBase CCollector EEmi
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: GD115
