BTD882D3 pdf Datasheet and Replacements, Transistor Equivalent Finder, Cross Reference

BTD882D3 Specs and Replacement

Type Designator: BTD882D3

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 10 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 90 MHz

Collector Capacitance (Cc): 45 pF

Forward Current Transfer Ratio (hFE), MIN: 180

Noise Figure, dB: -

Package: TO126ML

BTD882D3 Substitution

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BTD882D3 datasheet

..1. Size:177K cystek

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8.1. Size:302K cystek

btd882j3.pdf pdf_icon

Spec. No. C848J3-H Issued Date 2003.04.02 CYStech Electronics Corp. Revised Date 2013.03.12 Page No. 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50V IC 3A BTD882J3 RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772J3 Pb-free package Symbol Outli... See More ⇒

8.2. Size:320K cystek

btd882t3.pdf pdf_icon

Spec. No. C848T3-H Issued Date 2002.08.18 CYStech Electronics Corp. Revised Date 2014.03.17 Page No. 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 30V IC 3A BTD882T3 RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772T3 Pb-free package Symbol Out... See More ⇒

8.3. Size:246K cystek

btd882am3.pdf pdf_icon

Spec. No. C848M3-H Issued Date 2003.06.17 CYStech Electronics Corp. Revised Date 2013.08.12 Page No. 1/7 Low V NPN Epitaxial Planar Transistor CE(sat) BVCEO 50V IC 3A BTD882AM3 RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772AM3 Pb-free lead plating p... See More ⇒