BTD1304A3 Specs and Replacement

Type Designator: BTD1304A3

SMD Transistor Code: D1304

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 12 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Collector Capacitance (Cc): 10 pF

Forward Current Transfer Ratio (hFE), MIN: 400

Noise Figure, dB: -

Package: TO92

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BTD1304A3 datasheet

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BTD1304A3

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BTD1304A3

Spec. No. C857N3 Issued Date 2011.03.31 CYStech Electronics Corp. Revised Date 2011.04.01 Page No. 1/8 NPN Epitaxial Planar Transistor BVCEO 20V AUDIO MUTING APPLICATION IC 500mA RCE(SAT) 0.3 (typ) BTD1304N3 Features High Emitter-Base voltage, VEBO=12V(min). High reverse hFE, reverse hFE=20(min.) @VCE=2V, IC=4mA. Low On-resistance, Ron=0.6 (max)@IB... See More ⇒

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BTD1304A3

Spec. No. C214M3 Issued Date 2006.11.10 CYStech Electronics Corp. Revised Date 2013.08.06 Page No. 1/6 General Purpose NPN Epitaxial Planar Transistor BTD1383M3 Description The BTD1383M3 is a darlington amplifier transistor. Pb-free package Symbol Outline SOT-89 BTD1383M3 C B B Base B C E C Collector E E Emitter Absolute Maximum Ratin... See More ⇒

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BTD1304A3

Spec. No. C214L3 Issued Date 2005.01.20 CYStech Electronics Corp. Revised Date Page No. 1/4 General Purpose NPN Epitaxial Planar Transistor BTD1383L3 Description The BTD1383L3 is a darlington amplifier transistor. Symbol Outline BTD1383L3 SOT-223 C C B E C B Base B C Collector E E Emitter Absolute Maximum Ratings (Ta=25 C) Parameter ... See More ⇒

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Detailed specifications: BTD882I3, BTD882J3, BTD882SA3, BTD882ST3, BTD882T3, BTD965A3, BTD965LA3, BTD965N3, BD222, BTD1304N3, BTD1383L3, BTD1383M3, BTD1616AA3, BTD1616AM3, BTD1664M3, BTD1760J3, BTD1766M3

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