BTD2040N3S Datasheet, Equivalent, Cross Reference Search
Type Designator: BTD2040N3S
SMD Transistor Code: BS
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 45 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 150
Noise Figure, dB: -
Package: SOT-23
BTD2040N3S Transistor Equivalent Substitute - Cross-Reference Search
BTD2040N3S Datasheet (PDF)
btd2040n3s.pdf
Spec. No. : C223N3-A Issued Date : 2004.02.18 CYStech Electronics Corp.Revised Date :2012.10.03 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 25VIC 1ABTD2040N3S RCESAT 0.31(typ.) Features The BTD2040N3S is designed for general purpose low frequency power amplifier applications. Low VCE(sat), VCE(sat)=40mV (typical), at IC / IB = 50mA / 2.5mA
btd2098am3.pdf
Spec. No. : C847M3 Issued Date : 2003.04.17 CYStech Electronics Corp.Revised Date :2013.08.12 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTD2098AM3 Features Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A Excellent DC current gain characteristics Complementary to BTB1386AM3 Pb-free package Symbol Outline BTD2098AM3 SOT-89
btd2061fp.pdf
Spec. No. : C819FP Issued Date : 2005.09.07 CYStech Electronics Corp.Revised Date :2012.06.29 Page No. : 1/5 Low Vcesat NPN Epitaxial Planar Transistor BTD2061FP Features Low saturation voltage, typically VCE(sat)=0.25V at IC/IB=2A/0.2A. Excellent DC current gain characteristics. Wide SOA(safe operating area). Pb-free package. Symbol Outline BTD2061FP T
btd2098ln3.pdf
Spec. No. : C850N3 Issued Date : 2004.01.28 CYStech Electronics Corp.Revised Date :2012.02.21 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTD2098LN3 Features Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 3A / 0.1A Excellent DC current gain characteristics Complementary to BTB1386LN3 Pb-free package Symbol Outline BTD2098LN3 SOT-23
btd2098m3.pdf
Spec. No. : C623M3 Issued Date : 2013.03.19 CYStech Electronics Corp.Revised Date : 2013.04.17 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTD2098M3 Features Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A Excellent DC current gain characteristics Complementary to BTB1386M3 Pb-free lead plating package Symbol Outline BTD209
btd2057a3.pdf
Spec. No. : C855A3-A Issued Date : 2005.04.29 CYStech Electronics Corp.Revised Date : Page No. : 1/4 Silicon NPN Epitaxial Planar Transistor BTD2057A3Description High BV CEO High current capability Pb-free package Symbol Outline BTD2057A3 TO-92 BBase CCollector EEmitter E C BAbsolute Maximum Ratings (Ta=25C) Parameter Symbol Limits
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
