All Transistors. BTD2150A3 Datasheet

 

BTD2150A3 Datasheet and Replacement


   Type Designator: BTD2150A3
   SMD Transistor Code: D2150
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.75 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 90 MHz
   Collector Capacitance (Cc): 13 pF
   Forward Current Transfer Ratio (hFE), MIN: 180
   Noise Figure, dB: -
   Package: TO-92
 

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BTD2150A3 Datasheet (PDF)

 ..1. Size:248K  cystek
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BTD2150A3

Spec. No. : C848A3 Issued Date : 2005.02.04 CYStech Electronics Corp.Revised Date :2010.11.05 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50VIC 3ABTD2150A3 RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 100mA 0.1V at IC / IB = 1A / 50mA Excellent current gain characteristics Complementary to BTB1424A3

 6.1. Size:250K  cystek
btd2150am3.pdf pdf_icon

BTD2150A3

Spec. No. : C848M3-A Issued Date : 2002.08.18 CYStech Electronics Corp.Revised Date : 2013.12.30 Page No. : 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50VIC 3ABTD2150AM3 RCE(SAT) typ. 125m Features Low VCE(sat), VCE(sat)=0.1 V (typical), at IC / IB = 1A / 50mA Excellent current gain characteristics Complementary to BTB1424AM3 Pb-free lead

 6.2. Size:176K  cystek
btd2150ad3.pdf pdf_icon

BTD2150A3

Spec. No. : C848D3 Issued Date : 2004.07.06 CYStech Electronics Corp.Revised Date : 2005.11.16 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD2150AD3 Features Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA Excellent current gain characteristics Complementary to BTB1424AD3 Pb-free package Symbol Outline TO-126ML BTD2150A

 7.1. Size:290K  cystek
btd2150n3.pdf pdf_icon

BTD2150A3

Spec. No. : C848N3-A Issued Date : 2004.03.26 CYStech Electronics Corp.Revised Date : 2012.11.28 Page No. : 1/8 Low V NPN Epitaxial Planar Transistor CE(sat)BVCEO 50VIC 4ABTD2150N3 RCE(SAT) typ. 90m Features Low VCE(sat), typically 0.18V at IC / IB = 2A / 0.1A Excellent current gain characteristics Complementary to BTB1424N3 Pb-free lead plating a

Datasheet: BTD2057A3 , BTD2061FP , BTD2098AM3 , BTD2098LN3 , BTD2098M3 , BTD2114N3 , BTD2118LJ3 , BTD2118T3 , 2SC1815 , BTD2150AD3 , BTD2150AM3 , BTD2150FP , BTD2150L3 , BTD2150N3 , BTD2195J3 , BTD2195L3 , BTD2195M3 .

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