All Transistors. BTD2498N3 Datasheet

 

BTD2498N3 Datasheet and Replacement


   Type Designator: BTD2498N3
   SMD Transistor Code: DH
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 400 V
   Maximum Collector-Emitter Voltage |Vce|: 400 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 13 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: SOT-23
 

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BTD2498N3 Datasheet (PDF)

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BTD2498N3

Spec. No. : C899N3 Issued Date : 2009.12.23 CYStech Electronics Corp.Revised Date : Page No. : 1/6 High Voltage NPN Epitaxial Planar Transistor Built-in Base Resistor BTD2498N3 Description High breakdown voltage. (BV =400V) CEO Low saturation voltage, typical V =0.13V at Ic/I =20mA/1mA. CE(sat) B Complementary to BTB1498N3 Pb-free package Equivalent

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BTD2498N3

Spec. No. : C223N3 Issued Date : 2003.05.26 CYStech Electronics Corp.Revised Date : 2012.10.03 Page No. : 1/8 Low Vcesat NPN Epitaxial Planar Transistor BTD2444N3 Features The BTD2444N3 is designed for general purpose low frequency power amplifier applications. Low VCE(sat), VCE(sat)=40mV (typical), at IC / IB = 50mA / 2.5mA Complementary to BTB1590N3 Pb-f

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BTD2498N3

Spec. No. : C223S3-R Issued Date : 2005.06.29 CYStech Electronics Corp.Revised Date :2010.10.03 Page No. : 1/8 Low Vcesat NPN Epitaxial Planar Transistor BTD2444S3 Features The BTD2444S3 is designed for general purpose low frequency power amplifier applications. Low VCE(sat), VCE(sat)=40mV (typical), at IC / IB = 50mA / 2.5mA Pb-free lead plating and halogen-fre

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BTD2498N3

Spec. No. : C223L3 Issued Date : 2011.01.03 CYStech Electronics Corp.Revised Date : 2012.10.03 Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 20VIC 1ABTD2444L3 RCESAT 0.35(typ.) Features The BTD2444L3 is designed for general purpose low frequency power amplifier applications. Low VCE(sat), VCE(sat)=0.35V (typ), at IC / IB = 1A / 50mA Com

Datasheet: BTD2150N3 , BTD2195J3 , BTD2195L3 , BTD2195M3 , BTD2195T3 , BTD2444L3 , BTD2444N3 , BTD2444S3 , 13005 , BTD2510F3 , BTD2568L3 , BTD4512F3 , BTD5213J3 , BTD5213L3 , BTD5213M3 , BTD5510F3 , BTD5765B3 .

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