BTD5213M3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTD5213M3
SMD Transistor Code: DF
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 230 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT-89
BTD5213M3 Transistor Equivalent Substitute - Cross-Reference Search
BTD5213M3 Datasheet (PDF)
btd5213m3.pdf
Spec. No. : C307M3 Issued Date : 2007.01.10 CYStech Electronics Corp.Revised Date : 2014.01.23 Page No. : 1/7 NPN Epitaxial Planar Transistor BTD5213M3 Features High VCEO, VCEO=100V High IC, IC(DC)=1A Low VCE(sat) Good current gain linearity Complementary to BTB1260M3 Pb-free lead plating and halogen-free package Symbol Outline BTD5213M3 SOT
btd5213l3.pdf
Spec. No. : C304L3 Issued Date : 2007.05.04 CYStech Electronics Corp.Revised Date :2011.07.28 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BTD5213L3Description General purpose mainly intended for use in medium power industrial application and for audio amplifier output stage. Features High collector current and low V CE(SAT). Complement to BTB
btd5213j3.pdf
Spec. No. : C304J3 Issued Date : 2010.12.06 CYStech Electronics Corp.Revised Date : 2012.05.16 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BTD5213J3Features Low collector saturation voltage High breakdown voltage, V =80V (min.) CEO High collector current, I =1A (DC) C(max) Pb-free lead plating package Symbol Outline TO-252(DPAK)
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
