BTD5213M3 Specs and Replacement
Type Designator: BTD5213M3
SMD Transistor Code: DF
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 2 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 230 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Package: SOT-89
BTD5213M3 Substitution
- BJT ⓘ Cross-Reference Search
BTD5213M3 datasheet
Spec. No. C307M3 Issued Date 2007.01.10 CYStech Electronics Corp. Revised Date 2014.01.23 Page No. 1/7 NPN Epitaxial Planar Transistor BTD5213M3 Features High VCEO, VCEO=100V High IC, IC(DC)=1A Low VCE(sat) Good current gain linearity Complementary to BTB1260M3 Pb-free lead plating and halogen-free package Symbol Outline BTD5213M3 SOT... See More ⇒
Spec. No. C304L3 Issued Date 2007.05.04 CYStech Electronics Corp. Revised Date 2011.07.28 Page No. 1/7 General Purpose NPN Epitaxial Planar Transistor BTD5213L3 Description General purpose mainly intended for use in medium power industrial application and for audio amplifier output stage. Features High collector current and low V CE(SAT). Complement to BTB... See More ⇒
Spec. No. C304J3 Issued Date 2010.12.06 CYStech Electronics Corp. Revised Date 2012.05.16 Page No. 1/7 General Purpose NPN Epitaxial Planar Transistor BTD5213J3 Features Low collector saturation voltage High breakdown voltage, V =80V (min.) CEO High collector current, I =1A (DC) C(max) Pb-free lead plating package Symbol Outline TO-252(DPAK) ... See More ⇒
Detailed specifications: BTD2444N3, BTD2444S3, BTD2498N3, BTD2510F3, BTD2568L3, BTD4512F3, BTD5213J3, BTD5213L3, D880, BTD5510F3, BTD5765B3, BTD5974B3, BTD6055J3, BTD6055M3, BTD7520J3, BTD7521E3, BTD7521H8
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