BTD5765B3 Specs and Replacement
Type Designator: BTD5765B3
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.55 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 170 MHz
Collector Capacitance (Cc): 25 pF
Forward Current Transfer Ratio (hFE), MIN: 400
Package: TO-92SP
BTD5765B3 Substitution
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BTD5765B3 datasheet
Spec. No. C852B3 Issued Date 2004.05.28 CYStech Electronics Corp. Revised Date 2011.01.04 Page No. 1/5 Low VCE(sat) NPN Planar Transistor BTD5765B3 Features High current capability Low collector-to-emitter saturation voltage High allowable power dissipation Pb-free lead plating and halogen-free package Applications Relay drivers, lamp driver... See More ⇒
Detailed specifications: BTD2498N3, BTD2510F3, BTD2568L3, BTD4512F3, BTD5213J3, BTD5213L3, BTD5213M3, BTD5510F3, D209L, BTD5974B3, BTD6055J3, BTD6055M3, BTD7520J3, BTD7521E3, BTD7521H8, BTD7521J3, BTD8530F3
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