BTD6055J3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTD6055J3
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 15 W
Maximum Collector-Base Voltage |Vcb|: 15 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 250
Noise Figure, dB: -
Package: TO-252
BTD6055J3 Transistor Equivalent Substitute - Cross-Reference Search
BTD6055J3 Datasheet (PDF)
btd6055j3.pdf
Spec. No. : C659J3 Issued Date : 2008.06.25 CYStech Electronics Corp.Revised Date : Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTD6055J3 Features Low VCE(SAT) Low RCE(SAT), RCE(SAT)=50 m(typically) at IC=5A Low operating collector voltage Excellent current gain characteristics at very low VCE Suitable for low dropout voltage applicati
btd6055m3.pdf
Spec. No. : C659M3 Issued Date : 2008.06.25 CYStech Electronics Corp.Revised Date : Page No. : 1/6 NPN Epitaxial Planar High Current (High Performance) Transistor BTD6055M3Features Low VCE(SAT) Low RCE(SAT), RCE(SAT)=50 m(typically) at IC=5A Low operating collector voltage Excellent current gain characteristics at very low VCE Suitable for low drop
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: BTD4512F3
