All Transistors. BTD6055M3 Datasheet

 

BTD6055M3 Datasheet, Equivalent, Cross Reference Search

Type Designator: BTD6055M3

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 15 V

Maximum Collector-Emitter Voltage |Vce|: 10 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 6 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 250

Noise Figure, dB: -

Package: SOT-89

BTD6055M3 Transistor Equivalent Substitute - Cross-Reference Search

 

BTD6055M3 Datasheet (PDF)

1.1. btd6055m3.pdf Size:236K _cystek

BTD6055M3
BTD6055M3

Spec. No. : C659M3 Issued Date : 2008.06.25 CYStech Electronics Corp. Revised Date : Page No. : 1/6 NPN Epitaxial Planar High Current (High Performance) Transistor BTD6055M3 Features • Low VCE(SAT) • Low RCE(SAT), RCE(SAT)=50 mΩ(typically) at IC=5A • Low operating collector voltage • Excellent current gain characteristics at very low VCE • Suitable for low drop

3.1. btd6055j3.pdf Size:235K _cystek

BTD6055M3
BTD6055M3

Spec. No. : C659J3 Issued Date : 2008.06.25 CYStech Electronics Corp. Revised Date : Page No. : 1/6 Low Vcesat NPN Epitaxial Planar Transistor BTD6055J3 Features • Low VCE(SAT) • Low RCE(SAT), RCE(SAT)=50 mΩ(typically) at IC=5A • Low operating collector voltage • Excellent current gain characteristics at very low VCE • Suitable for low dropout voltage applicati

Datasheet: BTD4512F3 , BTD5213J3 , BTD5213L3 , BTD5213M3 , BTD5510F3 , BTD5765B3 , BTD5974B3 , BTD6055J3 , 2N5088 , BTD7520J3 , BTD7521E3 , BTD7521H8 , BTD7521J3 , BTD8530F3 , BTD9065D3 , BTN3A60T3 , BTN853L3 .

 


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