BTN3A60T3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTN3A60T3
SMD Transistor Code: 3A60
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 900 V
Maximum Collector-Emitter Voltage |Vce|: 700 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO-126
BTN3A60T3 Transistor Equivalent Substitute - Cross-Reference Search
BTN3A60T3 Datasheet (PDF)
btn3a60t3.pdf
Spec. No. : C810T3 Issued Date : 2007.12.05 CYStech Electronics Corp.Revised Date : Page No. : 1/4 High Voltage NPN Triple Diffusion Planar Transistor BTN3A60T3 Features High breakdown voltage. (BV =700V) CEO High collector current capability (I =3A) C(max)Symbol Outline BTN3A60T3 TO-126 BBase CCollector EEmitter B C E Absolute Maximum Ratin
Datasheet: 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
History: NSS12601CF8T1G
History: NSS12601CF8T1G
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