BTN3A60T3 Datasheet. Specs and Replacement
Type Designator: BTN3A60T3 📄📄
SMD Transistor Code: 3A60
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 40 W
Maximum Collector-Base Voltage |Vcb|: 900 V
Maximum Collector-Emitter Voltage |Vce|: 700 V
Maximum Emitter-Base Voltage |Veb|: 9 V
Maximum Collector Current |Ic max|: 3 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO-126
BTN3A60T3 Substitution
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BTN3A60T3 datasheet
Spec. No. C810T3 Issued Date 2007.12.05 CYStech Electronics Corp. Revised Date Page No. 1/4 High Voltage NPN Triple Diffusion Planar Transistor BTN3A60T3 Features High breakdown voltage. (BV =700V) CEO High collector current capability (I =3A) C(max) Symbol Outline BTN3A60T3 TO-126 B Base C Collector E Emitter B C E Absolute Maximum Ratin... See More ⇒
Detailed specifications: BTD6055J3, BTD6055M3, BTD7520J3, BTD7521E3, BTD7521H8, BTD7521J3, BTD8530F3, BTD9065D3, 2SA1015, BTN853L3, BTN1053A3, BTN1053I3, BTN1053K3, BTN1053L3, BTN1053M3, BTN1101E3, BTN2222A3
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