All Transistors. BTP1955L3 Datasheet

 

BTP1955L3 Datasheet, Equivalent, Cross Reference Search

Type Designator: BTP1955L3

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 3 W

Maximum Collector-Base Voltage |Vcb|: 180 V

Maximum Collector-Emitter Voltage |Vce|: 140 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 110 MHz

Collector Capacitance (Cc): 40 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT-223

BTP1955L3 Transistor Equivalent Substitute - Cross-Reference Search

 

BTP1955L3 Datasheet (PDF)

1.1. btp1955l3.pdf Size:257K _cystek

BTP1955L3
BTP1955L3

Spec. No. : C811L3 Issued Date : 2007.09.04 CYStech Electronics Corp. Revised Date : 2009.09.23 Page No. : 1/6 PNP Epitaxial Planar High Current (High Performance) Transistor BTP1955L3 Features • 4 Amps continuous current, up to 10 Amps peak current • Very low saturation voltage • Excellent gain characteristics specified up to 3 Amps • Ptot=3Watts Ω • Extreme

Datasheet: BTNA45N3 , BTNH10A3 , BTNH10N3 , BTP949L3 , BTP953L3 , BTP955J3 , BTP955L3 , BTP955M3 , 2N5551 , BTP2014L3 , BTP2907A3 , BTP2907AL3 , BTP2907AN3 , BTP2907SL3 , BTP3906A3 , BTP3906N3 , BTP5401A3 .

 


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