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BTP1955L3 Specs and Replacement

Type Designator: BTP1955L3

SMD Transistor Code: 1955

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 3 W

Maximum Collector-Base Voltage |Vcb|: 180 V

Maximum Collector-Emitter Voltage |Vce|: 140 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 4 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 110 MHz

Collector Capacitance (Cc): 40 pF

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT-223

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BTP1955L3 datasheet

 ..1. Size:257K  cystek

 btp1955l3.pdf pdf_icon

BTP1955L3

Spec. No. C811L3 Issued Date 2007.09.04 CYStech Electronics Corp. Revised Date 2009.09.23 Page No. 1/6 PNP Epitaxial Planar High Current (High Performance) Transistor BTP1955L3 Features 4 Amps continuous current, up to 10 Amps peak current Very low saturation voltage Excellent gain characteristics specified up to 3 Amps Ptot=3Watts Extreme... See More ⇒

Detailed specifications: BTNA45N3 , BTNH10A3 , BTNH10N3 , BTP949L3 , BTP953L3 , BTP955J3 , BTP955L3 , BTP955M3 , BC557 , BTP2014L3 , BTP2907A3 , BTP2907AL3 , BTP2907AN3 , BTP2907SL3 , BTP3906A3 , BTP3906N3 , BTP5401A3 .

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