BTP1955L3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTP1955L3
SMD Transistor Code: 1955
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 3 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 110 MHz
Collector Capacitance (Cc): 40 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT-223
BTP1955L3 Transistor Equivalent Substitute - Cross-Reference Search
BTP1955L3 Datasheet (PDF)
..1. Size:257K cystek
btp1955l3.pdf
btp1955l3.pdf
Spec. No. : C811L3 Issued Date : 2007.09.04 CYStech Electronics Corp.Revised Date : 2009.09.23 Page No. : 1/6 PNP Epitaxial Planar High Current (High Performance) Transistor BTP1955L3Features 4 Amps continuous current, up to 10 Amps peak current Very low saturation voltage Excellent gain characteristics specified up to 3 Amps Ptot=3Watts Extreme
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
