All Transistors. BTP1955L3 Datasheet

 

BTP1955L3 Datasheet and Replacement


   Type Designator: BTP1955L3
   SMD Transistor Code: 1955
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 3 W
   Maximum Collector-Base Voltage |Vcb|: 180 V
   Maximum Collector-Emitter Voltage |Vce|: 140 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 110 MHz
   Collector Capacitance (Cc): 40 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-223
 
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BTP1955L3 Datasheet (PDF)

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BTP1955L3

Spec. No. : C811L3 Issued Date : 2007.09.04 CYStech Electronics Corp.Revised Date : 2009.09.23 Page No. : 1/6 PNP Epitaxial Planar High Current (High Performance) Transistor BTP1955L3Features 4 Amps continuous current, up to 10 Amps peak current Very low saturation voltage Excellent gain characteristics specified up to 3 Amps Ptot=3Watts Extreme

Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

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