BTP2014L3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTP2014L3
SMD Transistor Code: P2014
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 3 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 31 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT-223
BTP2014L3 Transistor Equivalent Substitute - Cross-Reference Search
BTP2014L3 Datasheet (PDF)
btp2014l3.pdf
Spec. No. : C624L3 Issued Date : 2013.04.19 CYStech Electronics Corp.Revised Date : Page No. : 1/8 PNP Epitaxial Planar High Current (High Performance) Transistor BTP2014L3Features 4 Amps continuous current, up to 10 Amps peak current Very low saturation voltage Extremely low equivalent on resistance, R =79m typ. at 3A CE(SAT) Pb-free lead plating and
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2S61