BTP2014L3 Specs and Replacement
Type Designator: BTP2014L3
SMD Transistor Code: P2014
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 3 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 140 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 31 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT-223
BTP2014L3 Substitution
- BJT ⓘ Cross-Reference Search
BTP2014L3 datasheet
Spec. No. C624L3 Issued Date 2013.04.19 CYStech Electronics Corp. Revised Date Page No. 1/8 PNP Epitaxial Planar High Current (High Performance) Transistor BTP2014L3 Features 4 Amps continuous current, up to 10 Amps peak current Very low saturation voltage Extremely low equivalent on resistance, R =79m typ. at 3A CE(SAT) Pb-free lead plating and ... See More ⇒
Detailed specifications: BTNH10A3, BTNH10N3, BTP949L3, BTP953L3, BTP955J3, BTP955L3, BTP955M3, BTP1955L3, TIP42C, BTP2907A3, BTP2907AL3, BTP2907AN3, BTP2907SL3, BTP3906A3, BTP3906N3, BTP5401A3, BTP8550A3
Keywords - BTP2014L3 pdf specs
BTP2014L3 cross reference
BTP2014L3 equivalent finder
BTP2014L3 pdf lookup
BTP2014L3 substitution
BTP2014L3 replacement
