2N6436 Datasheet and Replacement
Type Designator: 2N6436
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 200 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 25 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 40 MHz
Collector Capacitance (Cc): 700 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO3
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2N6436 Datasheet (PDF)
2n6436 2n6437 2n6438.pdf

Order this documentMOTOROLAby 2N6436/DSEMICONDUCTOR TECHNICAL DATA2N6436High-Power PNP Silicon2N6437Transistors2N6438*. . . designed for use in industrialmilitary power amplifier and switching circuit*Motorola Preferred Deviceapplications. High CollectorEmitter Sustaining Voltage 25 AMPEREVCEO(sus) = 80 Vdc (Min) 2N6436POWER TRANSISTORSVCEO(sus)
2n6436 2n6437 2n6438.pdf

ABoca Semiconductor Corp BSC http://www.bocasemi.comABoca Semiconductor Corp BSC http://www.bocasemi.comABoca Semiconductor Corp BSC http://www.bocasemi.comABoca Semiconductor Corp BSC http://www.bocasemi.com
2n6436 2n6437 2n6438.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6436 2N6437 2N6438 DESCRIPTION With TO-3 package High DC current gain Fast switching times Low collector saturation voltage Complement to type 2N6338~2N6341 APPLICATIONS For use in industrial-military power amplifier and switching circuit applications PINNING(see Fig.2) PIN DESCRIPT
Datasheet: 2N6428A , 2N6429 , 2N6429A , 2N643 , 2N6430 , 2N6431 , 2N6432 , 2N6433 , 2SD718 , 2N6436A , 2N6437 , 2N6437A , 2N6438 , 2N6438A , 2N6439 , 2N644 , 2N6441 .
History: KTB2510 | 2SA3802 | D29E2 | 2N2198 | BDS28A | 2SD650H | 2SC3142
Keywords - 2N6436 transistor datasheet
2N6436 cross reference
2N6436 equivalent finder
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History: KTB2510 | 2SA3802 | D29E2 | 2N2198 | BDS28A | 2SD650H | 2SC3142



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