BTPA92A3 Specs and Replacement
Type Designator: BTPA92A3
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: TO-92
BTPA92A3 Substitution
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BTPA92A3 datasheet
Spec. No. C308A3 Issued Date 2003.06.27 CYStech Electronics Corp. Revised Date 2013.11.06 Page No. 1/6 General Purpose PNP Epitaxial Planar Transistor BTPA92A3 Description High breakdown voltage. (BV =-300V) CEO Low collector output capacitance. Ideal for chroma circuit. Pb-free lead plating and halogen-free package Symbol Outline BTPA92A3 TO-... See More ⇒
Spec. No. C309N3-H Issued Date 2003.06.30 CYStech Electronics Corp. Revised Date 2011.02.17 Page No. 1/6 High Voltage PNP Epitaxial Planar Transistor BVCEO -400V IC -0.15A VCESAT(max) -0.3V BTPA94N3 Description High breakdown voltage. (BV =-400V) CEO Low saturation voltage, typically V = -0.07V at Ic/I =-10mA/-1mA. CE(sat) B Wide SOA (safe operation a... See More ⇒
Spec. No. C309A3 Issued Date 2003.06.30 CYStech Electronics Corp. Revised Date Page No. 1/4 High Voltage PNP Epitaxial Planar Transistor BTPA94A3 Description High breakdown voltage. (BV =-400V) CEO Low saturation voltage, typically V = -0.07V at Ic/I =-10mA/-1mA. CE(sat) B Wide SOA (safe operation area). Complementary to BTNA44A3. Symbol Outline... See More ⇒
Detailed specifications: BTP3906A3, BTP3906N3, BTP5401A3, BTP8550A3, BTP8550BA3, BTP8550N3, BTP9050N3, BTPA56N3, S8550, BTPA94A3, BTPA94N3, BU941ZE3, BU941ZF3, BU941ZFP, BU941ZLE3, BU941ZP3, D44H11E3
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