BTPA92A3 Datasheet, Equivalent, Cross Reference Search
Type Designator: BTPA92A3
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.625 W
Maximum Collector-Base Voltage |Vcb|: 300 V
Maximum Collector-Emitter Voltage |Vce|: 300 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Collector Capacitance (Cc): 6 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO-92
BTPA92A3 Transistor Equivalent Substitute - Cross-Reference Search
BTPA92A3 Datasheet (PDF)
btpa92a3.pdf
Spec. No. : C308A3 Issued Date : 2003.06.27 CYStech Electronics Corp.Revised Date : 2013.11.06 Page No. : 1/6 General Purpose PNP Epitaxial Planar Transistor BTPA92A3Description High breakdown voltage. (BV =-300V) CEO Low collector output capacitance. Ideal for chroma circuit. Pb-free lead plating and halogen-free package Symbol Outline BTPA92A3 TO-
btpa94n3.pdf
Spec. No. : C309N3-H Issued Date : 2003.06.30 CYStech Electronics Corp.Revised Date : 2011.02.17 Page No. : 1/6 High Voltage PNP Epitaxial Planar Transistor BVCEO -400VIC -0.15AVCESAT(max) -0.3VBTPA94N3Description High breakdown voltage. (BV =-400V) CEO Low saturation voltage, typically V = -0.07V at Ic/I =-10mA/-1mA. CE(sat) B Wide SOA (safe operation a
btpa94a3.pdf
Spec. No. : C309A3 Issued Date : 2003.06.30 CYStech Electronics Corp. Revised Date : Page No. : 1/4 High Voltage PNP Epitaxial Planar Transistor BTPA94A3Description High breakdown voltage. (BV =-400V) CEO Low saturation voltage, typically V = -0.07V at Ic/I =-10mA/-1mA. CE(sat) B Wide SOA (safe operation area). Complementary to BTNA44A3. Symbol Outline
Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2222A , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .
