All Transistors. BTPA92A3 Datasheet

 

BTPA92A3 Datasheet and Replacement


   Type Designator: BTPA92A3
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.625 W
   Maximum Collector-Base Voltage |Vcb|: 300 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 50 MHz
   Collector Capacitance (Cc): 6 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO-92
 

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BTPA92A3 Datasheet (PDF)

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BTPA92A3

Spec. No. : C308A3 Issued Date : 2003.06.27 CYStech Electronics Corp.Revised Date : 2013.11.06 Page No. : 1/6 General Purpose PNP Epitaxial Planar Transistor BTPA92A3Description High breakdown voltage. (BV =-300V) CEO Low collector output capacitance. Ideal for chroma circuit. Pb-free lead plating and halogen-free package Symbol Outline BTPA92A3 TO-

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BTPA92A3

Spec. No. : C309N3-H Issued Date : 2003.06.30 CYStech Electronics Corp.Revised Date : 2011.02.17 Page No. : 1/6 High Voltage PNP Epitaxial Planar Transistor BVCEO -400VIC -0.15AVCESAT(max) -0.3VBTPA94N3Description High breakdown voltage. (BV =-400V) CEO Low saturation voltage, typically V = -0.07V at Ic/I =-10mA/-1mA. CE(sat) B Wide SOA (safe operation a

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BTPA92A3

Spec. No. : C309A3 Issued Date : 2003.06.30 CYStech Electronics Corp. Revised Date : Page No. : 1/4 High Voltage PNP Epitaxial Planar Transistor BTPA94A3Description High breakdown voltage. (BV =-400V) CEO Low saturation voltage, typically V = -0.07V at Ic/I =-10mA/-1mA. CE(sat) B Wide SOA (safe operation area). Complementary to BTNA44A3. Symbol Outline

Datasheet: BTP3906A3 , BTP3906N3 , BTP5401A3 , BTP8550A3 , BTP8550BA3 , BTP8550N3 , BTP9050N3 , BTPA56N3 , A940 , BTPA94A3 , BTPA94N3 , BU941ZE3 , BU941ZF3 , BU941ZFP , BU941ZLE3 , BU941ZP3 , D44H11E3 .

History: TMPA812M3 | HBA8573S6R | 2SA504G | 2SB333H | BCP51-10 | BRT60 | 2SC2174

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