HBA1873S5 Specs and Replacement
Type Designator: HBA1873S5
SMD Transistor Code: SGR
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 110 MHz
Collector Capacitance (Cc): 2.3 pF
Forward Current Transfer Ratio (hFE), MIN: 200
Package: SOT-353
HBA1873S5 Substitution
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HBA1873S5 datasheet
Spec. No. C306S5 Issued Date 2011.11.03 CYStech Electronics Corp. Revised Date Page No. 1/7 General Purpose PNP Epitaxial Planar Transistors (dual transistors) HBA1873S5 Features Two BTA1037 chips in a SOT-353 package. Mounting possible with SOT-323 automatic mounting machines. Mounting cost and area can be cut in half. Complementary to HBC4944S5.... See More ⇒
Detailed specifications: BU941ZLE3, BU941ZP3, D44H11E3, D44H11J3, D45H11E3, D45H11J3, DTA144WS3, FBP5096G3, TIP127, HBA8573S6R, HBC8471S6R, HBC8472S6R, HBN2411S6R, HBN2412C6, HBN2412S6R, HBN2444S6R, HBN2515S6R
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