All Transistors. HBA1873S5 Datasheet

 

HBA1873S5 Datasheet and Replacement


   Type Designator: HBA1873S5
   SMD Transistor Code: SGR
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 110 MHz
   Collector Capacitance (Cc): 2.3 pF
   Forward Current Transfer Ratio (hFE), MIN: 200
   Noise Figure, dB: -
   Package: SOT-353
 

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HBA1873S5 Datasheet (PDF)

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HBA1873S5

Spec. No. : C306S5 Issued Date : 2011.11.03 CYStech Electronics Corp.Revised Date : Page No. : 1/7 General Purpose PNP Epitaxial Planar Transistors (dual transistors) HBA1873S5 Features Two BTA1037 chips in a SOT-353 package. Mounting possible with SOT-323 automatic mounting machines. Mounting cost and area can be cut in half. Complementary to HBC4944S5.

Datasheet: BU941ZLE3 , BU941ZP3 , D44H11E3 , D44H11J3 , D45H11E3 , D45H11J3 , DTA144WS3 , FBP5096G3 , 2SC945 , HBA8573S6R , HBC8471S6R , HBC8472S6R , HBN2411S6R , HBN2412C6 , HBN2412S6R , HBN2444S6R , HBN2515S6R .

History: 2SB333H | TD13004D | BLY27 | BCP51-10 | 2SC2174 | TMPA812M3 | BRT60

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