HBC8471S6R Specs and Replacement

Type Designator: HBC8471S6R

SMD Transistor Code: CH

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 80 MHz

Collector Capacitance (Cc): 2 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SOT-363R

 HBC8471S6R Substitution

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HBC8471S6R datasheet

 ..1. Size:250K  cystek

 hbc8471s6r.pdf pdf_icon

HBC8471S6R

Spec. No. C202S6R Issued Date 2010.03.22 CYStech Electronics Corp. Revised Date 2011.02.22 Page No. 1/6 General Purpose NPN Epitaxial Planar Transistors (dual transistors) HBC8471S6R Features Two BTC2412 chips in a SOT-363R package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference.... See More ⇒

 8.1. Size:38K  hsmc

 hbc847.pdf pdf_icon

HBC8471S6R

Spec. No. HE6827 HI-SINCERITY Issued Date 1993.11.28 Revised Date 2004.09.01 MICROELECTRONICS CORP. Page No. 1/4 HBC847 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC847 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. SOT-23 Absolute Maximum Ratings Maximum Temperatures Storage Temperature.... See More ⇒

 8.2. Size:251K  cystek

 hbc8472s6r.pdf pdf_icon

HBC8471S6R

Spec. No. C202S6R Issued Date 2010.03.22 CYStech Electronics Corp. Revised Date 2011.02.22 Page No. 1/6 General Purpose NPN Epitaxial Planar Transistors (dual transistors) HBC8472S6R Features Two BTC2412 chips in a SOT-363R package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independent, eliminating interference.... See More ⇒

 9.1. Size:66K  hsmc

 hbc848.pdf pdf_icon

HBC8471S6R

Spec. No. HE6843 HI-SINCERITY Issued Date 1994.07.29 Revised Date 2008.01.30 MICROELECTRONICS CORP. Page No. 1/4 HBC848 NPN EPITAXIAL PLANAR TRANSISTOR Description The HBC848 is designed for switching and AF amplifier amplification suitable for automatic insertion in thick and thin-film circuits. SOT-23 Absolute Maximum Ratings Maximum Temperatures Storag... See More ⇒

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Detailed specifications: D44H11E3, D44H11J3, D45H11E3, D45H11J3, DTA144WS3, FBP5096G3, HBA1873S5, HBA8573S6R, 2SD2499, HBC8472S6R, HBN2411S6R, HBN2412C6, HBN2412S6R, HBN2444S6R, HBN2515S6R, HBN3101S6R, HBNP45C6

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