HBNP45C6 Specs and Replacement

Type Designator: HBNP45C6

SMD Transistor Code: 45

Material of Transistor: Si

Polarity: NPN*PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.15 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 7(6) V

Maximum Collector Current |Ic max|: 0.15 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 80(60) MHz

Collector Capacitance (Cc): 2(4) pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: SOT-563

 HBNP45C6 Substitution

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HBNP45C6 datasheet

 ..1. Size:276K  cystek

 hbnp45c6.pdf pdf_icon

HBNP45C6

Spec. No. C901C6 Issued Date 2012.09.28 CYStech Electronics Corp. Revised Date Page No. 1/7 General Purpose NPN / PNP Epitaxial Planar Transistors (dual transistors) HBNP45C6 Features Includes a BTC2412 chip and a BTA1037 chip in a SOT-563 package. Mounting possible with SOT-523 automatic mounting machines. Transistor elements are independent, eliminati... See More ⇒

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HBNP45C6

Spec. No. C901S6R Issued Date 2004.04.19 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/7 General Purpose NPN / PNP Epitaxial Planar Transistors (dual transistors) HBNP45S6R Features Includes a BTC2412 chip and a BTA1037 chip in a SOT-363 package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independe... See More ⇒

Detailed specifications: HBC8471S6R, HBC8472S6R, HBN2411S6R, HBN2412C6, HBN2412S6R, HBN2444S6R, HBN2515S6R, HBN3101S6R, A1013, HBNP45S6R, HBNP54S6R, HBNP1268Q8, HBNP2227S6R, HBNP3946S6R, HBNP5213G6, HBNPZ1NS6R, HBP1036S6R

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