HBNP45S6R Specs and Replacement
Type Designator: HBNP45S6R
SMD Transistor Code: 46
Material of Transistor: Si
Polarity: NPN*PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 7(6) V
Maximum Collector Current |Ic max|: 0.15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 80(60) MHz
Collector Capacitance (Cc): 2(4) pF
Forward Current Transfer Ratio (hFE), MIN: 200
Package: SOT-363
HBNP45S6R Substitution
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HBNP45S6R datasheet
Spec. No. C901S6R Issued Date 2004.04.19 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/7 General Purpose NPN / PNP Epitaxial Planar Transistors (dual transistors) HBNP45S6R Features Includes a BTC2412 chip and a BTA1037 chip in a SOT-363 package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independe... See More ⇒
Spec. No. C901C6 Issued Date 2012.09.28 CYStech Electronics Corp. Revised Date Page No. 1/7 General Purpose NPN / PNP Epitaxial Planar Transistors (dual transistors) HBNP45C6 Features Includes a BTC2412 chip and a BTA1037 chip in a SOT-563 package. Mounting possible with SOT-523 automatic mounting machines. Transistor elements are independent, eliminati... See More ⇒
Detailed specifications: HBC8472S6R, HBN2411S6R, HBN2412C6, HBN2412S6R, HBN2444S6R, HBN2515S6R, HBN3101S6R, HBNP45C6, 2SB817, HBNP54S6R, HBNP1268Q8, HBNP2227S6R, HBNP3946S6R, HBNP5213G6, HBNPZ1NS6R, HBP1036S6R, HBP1037C6
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