All Transistors. HBNP2227S6R Datasheet

 

HBNP2227S6R Datasheet and Replacement


   Type Designator: HBNP2227S6R
   SMD Transistor Code: 27
   Material of Transistor: Si
   Polarity: NPN*PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 75(60) V
   Maximum Collector-Emitter Voltage |Vce|: 40(60) V
   Maximum Emitter-Base Voltage |Veb|: 6(5) V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 300(200) MHz
   Collector Capacitance (Cc): 8 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-363R
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HBNP2227S6R Datasheet (PDF)

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HBNP2227S6R

Spec. No. : C903S6R Issued Date : 2003.03.18 CYStech Electronics Corp.Revised Date : 2011.02.22 Page No. : 1/7 General Purpose NPN / PNP Epitaxial Planar Transistors (dual transistors) HBNP2227S6R Features Includes a PN2222A chip and PN2907A chip in a SOT-363R package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independ

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History: NTE2547 | 3DD4244DR | KTC4370 | 8550SS | BD516-5 | RN1909 | MUN2233

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