HBNP2227S6R Datasheet, Equivalent, Cross Reference Search
Type Designator: HBNP2227S6R
SMD Transistor Code: 27
Material of Transistor: Si
Polarity: NPN*PNP
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 75(60) V
Maximum Collector-Emitter Voltage |Vce|: 40(60) V
Maximum Emitter-Base Voltage |Veb|: 6(5) V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 300(200) MHz
Collector Capacitance (Cc): 8 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT-363R
HBNP2227S6R Transistor Equivalent Substitute - Cross-Reference Search
HBNP2227S6R Datasheet (PDF)
hbnp2227s6r.pdf
Spec. No. : C903S6R Issued Date : 2003.03.18 CYStech Electronics Corp.Revised Date : 2011.02.22 Page No. : 1/7 General Purpose NPN / PNP Epitaxial Planar Transistors (dual transistors) HBNP2227S6R Features Includes a PN2222A chip and PN2907A chip in a SOT-363R package. Mounting possible with SOT-323 automatic mounting machines. Transistor elements are independ
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