All Transistors. NE68000 Datasheet

 

NE68000 Datasheet and Replacement


   Type Designator: NE68000
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.4 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 10 V
   Maximum Emitter-Base Voltage |Veb|: 1.5 V
   Maximum Collector Current |Ic max|: 0.035 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 10000 MHz
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: CHIP
 

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NE68000 Datasheet (PDF)

 9.1. Size:247K  nec
 ne680xx 2sc5013 2sc5008 2sc4228 2sc3585 2sc3587 2sc4095.pdf pdf_icon

NE68000

NEC's NPN SILICON HIGH NE680FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz LOW NOISE FIGURE:1.7 dB at 2 GHz2.6 dB at 4 GHz HIGH ASSOCIATED GAIN:12.5 dB at 2 GHz8.0 dB at 4 GHz EXCELLENT LOW VOLTAGE00 (CHIP) 35 (MICRO-X)LOW CURRENT PERFORMANCEDESCRIPTIONNEC's NE680 series of NPN epitaxial silicon transistors isdesigned for l

 9.2. Size:625K  nec
 ne680series.pdf pdf_icon

NE68000

NEC's NPN SILICON HIGH NE680FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz EXCELLENT LOW VOLTAGE00 (CHIP) 35 (MICRO-X) LOW CURRENT PERFORMANCEDESCRIPTIONNEC's NE680 series of NPN epitaxial silicon transistors is de-sig

Datasheet: STBV32A3 , TIP31CE3 , TIP31CJ3 , TIP50I3 , TIP50J3 , 2SC5858 , 2SC6118LS , MJW18020G , B647 , NE68018 , NE68019 , NE68030 , NE68033 , NE68035 , NE68039 , 2SC5618 , 2SC5253 .

History: RJH6674 | B772O | 2SC3488O | HSE118

Keywords - NE68000 transistor datasheet

 NE68000 cross reference
 NE68000 equivalent finder
 NE68000 lookup
 NE68000 substitution
 NE68000 replacement

 

 
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