2N6439 Specs and Replacement
Type Designator: 2N6439
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 33 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 400 MHz
Collector Capacitance (Cc): 35 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Package: TO129
2N6439 Substitution
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2N6439 datasheet
Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6439/D The RF Line NPN Silicon 2N6439 RF Power Transistor . . . designed primarily for wideband large signal output amplifier stages in the 225 to 400 MHz frequency range. Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc Output Power = 60 Watts over 225 to 400 MHz Band 60 W, 225 to 400 MHz Minimum Gain ... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N6439/D The RF Line NPN Silicon 2N6439 RF Power Transistor . . . designed primarily for wideband large signal output amplifier stages in the 225 to 400 MHz frequency range. Guaranteed Performance in 225 to 400 MHz Broadband Amplifier @ 28 Vdc Output Power = 60 Watts over 225 to 400 MHz Band 60 W, 225 to 400 MHz Min... See More ⇒
Order this document MOTOROLA by 2N6436/D SEMICONDUCTOR TECHNICAL DATA 2N6436 High-Power PNP Silicon 2N6437 Transistors 2N6438 * . . . designed for use in industrial military power amplifier and switching circuit *Motorola Preferred Device applications. High Collector Emitter Sustaining Voltage 25 AMPERE VCEO(sus) = 80 Vdc (Min) 2N6436 POWER TRANSISTORS VCEO(sus)... See More ⇒
Detailed specifications: 2N6432, 2N6433, 2N6436, 2N6436A, 2N6437, 2N6437A, 2N6438, 2N6438A, 2N3906, 2N644, 2N6441, 2N6442, 2N6443, 2N6444, 2N6445, 2N6446, 2N6447
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