All Transistors. 2SD5703 Datasheet

 

2SD5703 Datasheet and Replacement


   Type Designator: 2SD5703
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 70 W
   Maximum Collector-Base Voltage |Vcb|: 1500 V
   Maximum Collector-Emitter Voltage |Vce|: 800 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 5.3
   Noise Figure, dB: -
   Package: TO3P
 

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2SD5703 Datasheet (PDF)

 ..1. Size:188K  inchange semiconductor
 2sd5703.pdf pdf_icon

2SD5703

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SD5703DESCRIPTIONHigh Breakdown Voltage-: VCBO= 1500V (Min)High Switching SpeedHigh ReliabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

 8.1. Size:217K  inchange semiconductor
 2sd570.pdf pdf_icon

2SD5703

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD570DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 70V(Min.)(BR)CEOLow Collector Saturation Voltage: V = 0.6V(Max.)@I = 2ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS

 8.2. Size:189K  inchange semiconductor
 2sd5702.pdf pdf_icon

2SD5703

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SD5702DESCRIPTIONHigh Breakdown Voltage-: VCBO= 1500V (Min)High Switching SpeedHigh ReliabilityBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection circuits ofcolour TV receivers.ABSOLUTE MAXIMUM RAT

 9.1. Size:169K  nec
 2sd571.pdf pdf_icon

2SD5703

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Keywords - 2SD5703 transistor datasheet

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