All Transistors. 2SA1193K Datasheet

 

2SA1193K Datasheet and Replacement


   Type Designator: 2SA1193K
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.9 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 7 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 2000
   Noise Figure, dB: -
   Package: TO92MOD
 

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2SA1193K Datasheet (PDF)

 ..1. Size:35K  hitachi
 2sa1193k.pdf pdf_icon

2SA1193K

2SA1193(K)Silicon PNP Epitaxial, DarlingtonApplicationHigh gain amplifierOutlineTO-92MOD231. Emitter2. Collector3. Base13212SA1193(K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7 VCollector current IC 0.5 ACollector peak

 7.1. Size:34K  hitachi
 2sa1193.pdf pdf_icon

2SA1193K

2SA1193(K)Silicon PNP Epitaxial, DarlingtonApplicationHigh gain amplifierOutlineTO-92MOD231. Emitter2. Collector3. Base13212SA1193(K)Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 60 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 7 VCollector current IC 0.5 ACollector peak

 8.1. Size:105K  1
 2sa1198s 2sa1199s.pdf pdf_icon

2SA1193K

 8.2. Size:126K  toshiba
 2sa1195.pdf pdf_icon

2SA1193K

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Datasheet: S8050MD , NJW0281G , NJW0302G , 2SC5614 , 2SC5800 , 2SD2195 , 2SD2398 , 2SD2004 , 13005 , 129NT1A-1 , 129NT1B-1 , 129NT1V-1 , 129NT1G-1 , 129NT1D-1 , 129NT1E-1 , 129NT1ZH-1 , K129NT1A-1 .

Keywords - 2SA1193K transistor datasheet

 2SA1193K cross reference
 2SA1193K equivalent finder
 2SA1193K lookup
 2SA1193K substitution
 2SA1193K replacement

 

 
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