2SA1193K Specs and Replacement

Type Designator: 2SA1193K

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.9 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 7 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 2000

Noise Figure, dB: -

Package: TO92MOD

 2SA1193K Substitution

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2SA1193K datasheet

 ..1. Size:35K  hitachi

2sa1193k.pdf pdf_icon

2SA1193K

2SA1193(K) Silicon PNP Epitaxial, Darlington Application High gain amplifier Outline TO-92MOD 2 3 1. Emitter 2. Collector 3. Base 1 3 2 1 2SA1193(K) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7 V Collector current IC 0.5 A Collector peak ... See More ⇒

 7.1. Size:34K  hitachi

2sa1193.pdf pdf_icon

2SA1193K

2SA1193(K) Silicon PNP Epitaxial, Darlington Application High gain amplifier Outline TO-92MOD 2 3 1. Emitter 2. Collector 3. Base 1 3 2 1 2SA1193(K) Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 60 V Collector to emitter voltage VCEO 60 V Emitter to base voltage VEBO 7 V Collector current IC 0.5 A Collector peak ... See More ⇒

 8.1. Size:105K  1

2sa1198s 2sa1199s.pdf pdf_icon

2SA1193K

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 8.2. Size:126K  toshiba

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2SA1193K

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Detailed specifications: S8050MD, NJW0281G, NJW0302G, 2SC5614, 2SC5800, 2SD2195, 2SD2398, 2SD2004, C3198, 129NT1A-1, 129NT1B-1, 129NT1V-1, 129NT1G-1, 129NT1D-1, 129NT1E-1, 129NT1ZH-1, K129NT1A-1

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