129NT1ZH-1 Datasheet. Specs and Replacement

Type Designator: 129NT1ZH-1  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.075 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 15 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.01 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

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129NT1ZH-1 datasheet

 8.1. Size:444K  russia

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129NT1ZH-1

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Detailed specifications: 2SD2004, 2SA1193K, 129NT1A-1, 129NT1B-1, 129NT1V-1, 129NT1G-1, 129NT1D-1, 129NT1E-1, BD177, K129NT1A-1, K129NT1B-1, K129NT1V-1, K129NT1G-1, K129NT1D-1, K129NT1E-1, K129NT1ZH-1, 159NT1A

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