All Transistors. 159NT1B Datasheet

 

159NT1B Datasheet and Replacement


   Type Designator: 159NT1B
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.075 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 20 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.01 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Collector Capacitance (Cc): 3 pF
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
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159NT1B Datasheet (PDF)

 8.1. Size:78K  onsemi
 ntljs4159n ntljs4159nt1g.pdf pdf_icon

159NT1B

NTLJS4159NPower MOSFET30 V, 7.8 A, mCoolt Single N-Channel,2x2 mm WDFN PackageFeatures WDFN Package Provides Exposed Drain Pad for Excellent Thermalhttp://onsemi.comConduction 2x2 mm Footprint Same as SC-88V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) in 2x2 mm Package35 mW @ 4.5 V 1.8 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate30 V

 8.2. Size:444K  russia
 k129nt1 k159nt1 b1129nt1.pdf pdf_icon

159NT1B

2002 1291-1, 1591, 11291-1, 11291 RD ALFA

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2SD1047 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2SC1262 | BC167 | 2SA1483 | ECG2360 | BDX85B | 3CA1837 | SGSF321

Keywords - 159NT1B transistor datasheet

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