159NT1V PDF and Equivalents Search

 

159NT1V Specs and Replacement

Type Designator: 159NT1V

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.075 W

Maximum Collector-Base Voltage |Vcb|: 20 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.01 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

 159NT1V Substitution

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159NT1V datasheet

 8.1. Size:78K  onsemi

 ntljs4159n ntljs4159nt1g.pdf pdf_icon

159NT1V

NTLJS4159N Power MOSFET 30 V, 7.8 A, mCoolt Single N-Channel, 2x2 mm WDFN Package Features WDFN Package Provides Exposed Drain Pad for Excellent Thermal http //onsemi.com Conduction 2x2 mm Footprint Same as SC-88 V(BR)DSS RDS(on) MAX ID MAX (Note 1) Lowest RDS(on) in 2x2 mm Package 35 mW @ 4.5 V 1.8 V RDS(on) Rating for Operation at Low Voltage Logic Level Gate 30 V... See More ⇒

 8.2. Size:444K  russia

 k129nt1 k159nt1 b1129nt1.pdf pdf_icon

159NT1V

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Detailed specifications: K129NT1B-1 , K129NT1V-1 , K129NT1G-1 , K129NT1D-1 , K129NT1E-1 , K129NT1ZH-1 , 159NT1A , 159NT1B , 2SC2240 , 159NT1G , 159NT1D , 159NT1E , K159NT1A , K159NT1B , K159NT1V , K159NT1G , K159NT1D .

History: 1129NTV1 | BC860W

Keywords - 159NT1V pdf specs

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