1129NTV1 Datasheet. Specs and Replacement

Type Designator: 1129NTV1  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.075 W

Maximum Collector-Base Voltage |Vcb|: 15 V

Maximum Collector-Emitter Voltage |Vce|: 13 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.01 A

Max. Operating Junction Temperature (Tj): 125 °C

Electrical Characteristics

Collector Capacitance (Cc): 3 pF

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

  📄📄 Copy 

 1129NTV1 Substitution

- BJT ⓘ Cross-Reference Search

 

1129NTV1 datasheet

 8.1. Size:444K  russia

 k129nt1 k159nt1 b1129nt1.pdf pdf_icon

1129NTV1

... See More ⇒

Detailed specifications: 159NT1D, 159NT1E, K159NT1A, K159NT1B, K159NT1V, K159NT1G, K159NT1D, K159NT1E, MPSA42, B1129NT1V-1, CS13001, CS13002, CS13003, T5609, T5610, TPT5609, TPT5610

Keywords - 1129NTV1 pdf specs

 1129NTV1 cross reference

 1129NTV1 equivalent finder

 1129NTV1 pdf lookup

 1129NTV1 substitution

 1129NTV1 replacement