2SA2050 Datasheet, Equivalent, Cross Reference Search
Type Designator: 2SA2050
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 25 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 50 MHz
Forward Current Transfer Ratio (hFE), MIN: 60
Noise Figure, dB: -
Package: TO220F
2SA2050 Transistor Equivalent Substitute - Cross-Reference Search
2SA2050 Datasheet (PDF)
2sa2050.pdf
2SA2050(BR3CA2050F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F PNP Silicon PNP transistor in a TO-220F Plastic Package. / Features , High VCEO, small ICBO and VCE(sat). / Applications Color TV
2sa2050.pdf
isc Silicon PNP Power Transistor 2SA2050DESCRIPTIONHigh DC current amplifier rateh :60-240@VCE=-5V,IC=-0.2AFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral Purpose Switching and AmplificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -180 VCBOV Collector-Emitter Vo
2sa2056.pdf
2SA2056 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2056 High-Speed Switching Applications Unit: mmDC-DC Converter Applications Strobe Applications High DC current gain: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.2 V (max) High-speed switching: tf = 90 ns (typ.) Maximum Ratings (Ta = 25C) Characteristics Symb
2sa2058.pdf
2SA2058 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2058 High-Speed Switching Applications Unit: mmDC-DC Converter Applications Strobe Applications High DC current gain: hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) High-speed switching: tf = 25 ns (typ.) Absolute Maximum Ratings (Ta = 25C) Characteri
2sa2059.pdf
2SA2059 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2059 High-Speed Switching Applications Unit: mm DC-DC Converter Applications Strobe Applications High DC current gain: hFE = 200 to 500 (I = -0.5 A) C Low collector-emitter saturation voltage: V = -0.19 V (max) CE (sat) High-speed switching: t = 40 ns (typ.) fMaximum Ratings (Ta = 25C) Characterist
2sa2057.pdf
Power Transistors2SA2057Silicon PNP epitaxial planar typeUnit: mm4.60.2Power supply for audio & visual equipments9.90.32.90.2such as TVs and VCRsIndustrial equipments such as DC-DC converters 3.20.1 Features High speed switching (tstg: storage time/tf: fall time is short) Low collector-emitter saturation voltage VCE(sat)1.40.22.60.1 Supe
2sa2058.pdf
SMD Type TransistorsPNP Transistors2SA2058SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features High DC current gain: hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage:1 2 VCE (sat) = -0.19 V (max)+0.1+0.050.95 -0.1 0.1 -0.01+0.1 High-speed switching: tf = 25 ns (typ.)1.9 -0.11.Base2.Emitter3.collector Absolute Max
2sa2057.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA2057DESCRIPTIONHigh speed switchingLow collector-emitter saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supply for audio & visual equipments such asTVS and VCRSIndustrial equipments such as DC-DC convertersABSOLU
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
