2SA2050 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SA2050 📄📄
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 25 W
Tensión colector-base (Vcb): 180 V
Tensión colector-emisor (Vce): 160 V
Tensión emisor-base (Veb): 6 V
Corriente del colector DC máxima (Ic): 1.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 50 MHz
Ganancia de corriente contínua (hFE): 60
Encapsulados: TO220F
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2SA2050 datasheet
2sa2050.pdf
2SA2050(BR3CA2050F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F PNP Silicon PNP transistor in a TO-220F Plastic Package. / Features , High VCEO, small ICBO and VCE(sat). / Applications Color TV
2sa2050.pdf
isc Silicon PNP Power Transistor 2SA2050 DESCRIPTION High DC current amplifier rate h 60-240@VCE=-5V,IC=-0.2A FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS General Purpose Switching and Amplification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -180 V CBO V Collector-Emitter Vo
2sa2056.pdf
2SA2056 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2056 High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage VCE (sat) = -0.2 V (max) High-speed switching tf = 90 ns (typ.) Maximum Ratings (Ta = 25 C) Characteristics Symb
2sa2058.pdf
2SA2058 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA2058 High-Speed Switching Applications Unit mm DC-DC Converter Applications Strobe Applications High DC current gain hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage VCE (sat) = -0.19 V (max) High-speed switching tf = 25 ns (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteri
Otros transistores... T5610, TPT5609, TPT5610, 2SC4977, 2SA1013T, 2SA1015M, 2SA1577W, 2SA1930I, BC547, 2SA3802, 2SA562M, 2SA715F, 2SA733M, 2SA933A, 2SA953M, 2SA966T, 2SB1261L
Parámetros del transistor bipolar y su interrelación.
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