2SA966T Specs and Replacement
Type Designator: 2SA966T
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.5 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 120 MHz
Collector Capacitance (Cc): 30 pF
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT89
2SA966T Substitution
- BJT ⓘ Cross-Reference Search
2SA966T datasheet
2SA966T(BR3CG966T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features 2SC2236T(BR3DG2236T) Complementary to 2SC2236T(BR3DG2236T). / Applications AF power amplifier applications. / Equivalent Circu... See More ⇒
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO-92L 2SA966 TRANSISTOR (PNP) 1. EMITTER FEATURE Complementary to 2SC2236 and 3 Watts Output Applications. 2. COLLECTOR 3. BASE Equivalent Circuit A966=Device code A 9 6 6 Solid dot = Green molding compound device, if none, the normal device XXX=Code ORDERING INFOR... See More ⇒
2SA966 TO-92L Transistor (PNP) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 2 3 4.700 1 5.100 Features Complementary to 2SC2236 and 3 Watts output Applications. 7.800 8.200 MAXIMUM RATINGS (TA=25 unless otherwise noted ) 0.600 0.800 Symbol Parameter Value Units VCBO Collector-Base Voltage -30 V 0.350 0.550 VCEO Collector-Emitter Voltage -30 V 13.800 14.200 VEB... See More ⇒
Detailed specifications: 2SA1930I , 2SA2050 , 2SA3802 , 2SA562M , 2SA715F , 2SA733M , 2SA933A , 2SA953M , C945 , 2SB1261L , 2SB1426 , 2SB649TA , 2SB772B , 2SB772D , 2SB772L , 2SB772M , 2SB772N .
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