All Transistors. 2SC1627AF Datasheet

 

2SC1627AF Datasheet and Replacement


   Type Designator: 2SC1627AF
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 1 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.4 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 10 pF
   Forward Current Transfer Ratio (hFE), MIN: 70
   Noise Figure, dB: -
   Package: TO126F
 

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2SC1627AF Datasheet (PDF)

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2SC1627AF

2SC1627AF(BR3DG1627AF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features 3035W 2SA817AF(BR3CG817AF) Driver stage of 30 to 35 watts application, complementary pair with 2SA817AF(BR3CG817AF). / Applications

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2SC1627AF

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 2sc1627a to-92mod.pdf pdf_icon

2SC1627AF

2SC1627A TO-92MOD Transistor (NPN)TO-92MOD1. EMITTER 1 22. COLLECTOR 3 3. BASE Features5.8006.200 Complementary to 2SA817A 8.400Driver Stage Application of 30 to 35 Watts Amplifiers 8.8000.900 1.1000.400MAXIMUM RATINGS(TA=25 unless otherwise noted) 0.60013.80014.200Symbol parameter Value Units VCBO 80 VCollector-Base Voltage 1.500 TYP

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2SC1627AF

2SC1627 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1627 Driver Stage Amplifier Applications Unit: mm Voltage Amplifier Applications Complementary to 2SA817 Driver stage application of 20 to 25 watts amplifiers. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO 80 VCollector-emitter voltage VCEO

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Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: 2SA1400

Keywords - 2SC1627AF transistor datasheet

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