KTC2022I Specs and Replacement
Type Designator: KTC2022I
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 20
W
Maximum Collector-Base Voltage |Vcb|: 100
V
Maximum Collector-Emitter Voltage |Vce|: 100
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 5
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 30
MHz
Collector Capacitance (Cc): 40
pF
Forward Current Transfer Ratio (hFE), MIN: 70
Noise Figure, dB: -
Package:
TO251
KTC2022I Transistor Equivalent Substitute - Cross-Reference Search
KTC2022I detailed specifications
..1. Size:471K blue-rocket-elect
ktc2022i.pdf 

KTC2022I(BR3DA2022I) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-251 NPN Silicon NPN transistor in a TO-251 Plastic Package. / Features , KTA1042I(BR3CA1042I) Low collector-emitter saturation voltage, complementary to KTA1042I(BR3CA1042I). / Applications General pu... See More ⇒
7.1. Size:53K kec
ktc2022d l.pdf 

SEMICONDUCTOR KTC2022D/L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES A I C J Low Collector-Emitter Saturation Voltage DIM MILLIMETERS VCE(sat)=-2.0V(Max.). _ A 6.60 + 0.2 _ B 6.10 + 0.2 _ C 5.0 + 0.2 _ D 1.10 + 0.2 _ E 2.70 + 0.2 _ F 2.30 + 0.1 H 1.00 MAX _ I 2.30 + 0.2 _ J 0.5 + 0.1 _ H P K 2.00 + 0.20 _ L 0.50 + 0.... See More ⇒
8.1. Size:48K kec
ktc2028.pdf 

SEMICONDUCTOR KTC2028 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A C FEATURES DIM MILLIMETERS S Low Collector-Emitter Saturation Voltage _ A 10.0 + 0.3 _ + B 15.0 0.3 E VCE(sat)=2.0V(Max.). C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ + J 13.6 0.5 L L R K _ 3.7 0.2 + L ... See More ⇒
8.2. Size:302K kec
ktc2020d l.pdf 

SEMICONDUCTOR KTC2020D/L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. DPAK FOR SURFACE MOUNT APPLICATIONS. A I C J FEATURES DIM MILLIMETERS _ A 6.60 + 0.2 Low Collector Saturation Voltage _ B 6.10 + 0.2 _ C 5.0 + 0.2 VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A. _ D 1.10 + 0.2 _ E 2.70 + 0.2 Straight Lead (IPAK, "L" Suffix) _ F 2.30 + 0.1 ... See More ⇒
8.3. Size:399K kec
ktc2025d l.pdf 

SEMICONDUCTOR KTC2025D/L TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW FREQUENCY POWER AMP, MEDIUM SPEED SWITCHING APPLICATIONS A I C J FEATURES DIM MILLIMETERS _ A 6.60 + 0.2 _ B 6.10 + 0.2 High breakdown voltage VCEO 120V, high current 1A. _ C 5.0 + 0.2 _ D 1.10 + 0.2 Low saturation voltage and good linearity of hFE. _ E 2.70 + 0.2 _ F 2.30 + 0.1 H 1.00 MAX C... See More ⇒
8.4. Size:40K kec
ktc2026.pdf 

SEMICONDUCTOR KTC2026 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A C FEATURES DIM MILLIMETERS S Low Collector Saturation Voltage _ A 10.0 0.3 + _ + B 15.0 0.3 VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A. E C _ 2.70 0.3 + D Complementary to KTA1046. 0.76+0.09/-0.05 _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ 13.6... See More ⇒
8.5. Size:444K kec
ktc2027.pdf 

SEMICONDUCTOR KTC2027 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A C FEATURES DIM MILLIMETERS S Good Linearity of hFE. _ A 10.0 0.3 + _ + B 15.0 0.3 E C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ + J 13.6 0.5 L L MAXIMUM RATING (Ta=25 ) R K _ 3.7 0.2 + L 1.2+0.25/-0.1 CHA... See More ⇒
8.6. Size:661K kec
ktc2020d.pdf 

SEMICONDUCTOR KTC2020D TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. DPAK FOR SURFACE MOUNT APPLICATIONS. FEATURES Low Collector Saturation Voltage VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A. Straight Lead (IPAK, "L" Suffix) Complementary to KTA1040D/L. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 60 V VC... See More ⇒
8.7. Size:906K blue-rocket-elect
ktc2020d.pdf 

KTC2020D Rev.E May.-2016 DATA SHEET / Descriptions TO-252 NPN Silicon NPN transistor in a TO-252 Plastic Package. / Features , KTA1040D Low VCE(sat),complementary to KTA1040D. / Applications General purpose amplifier for surface mount application... See More ⇒
8.8. Size:1154K kexin
ktc2028.pdf 

DIP Type Transistors NPN Transistors KTC2028 Unit mm TO-220F 0.20 0.20 0.20 2.54 0.20 0.70 Features Low Collector-Emitter Saturation Voltage Complementary to KTA1049 0.20 2.76 1.47max 0.20 0.50 0.20 0.80 1. Base 2.54typ 2. Collector 2.54typ 3. Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base V... See More ⇒
8.9. Size:996K kexin
ktc2026.pdf 

DIP Type Transistors NPN Transistors KTC2026 Unit mm TO-220F 0.20 0.20 0.20 2.54 Features 0.20 0.70 Low saturation voltage Complementary to KTA1046 0.20 2.76 1.47max 0.20 0.50 0.20 0.80 1. Base 2.54typ 2. Collector 2.54typ 3. Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 C... See More ⇒
8.10. Size:281K kexin
ktc2020d.pdf 

SMD Type Transistors Transistors NPN Transistors KTC2020D TO -252 U nit m m Features +0.1 +0.1 5 6. 5 2. 50-0.1 30-0.1 +0.2 +0.8 5. 0. 30-0.2 50-0.7 Low VCE(sat) 1.0V General purpose amplifier for surface mount applications. Complementary to KTA1040D. 0. 127 +0.1 m ax 0. 80-0.1 2 3 1 +0.1 2. 0. 3 60-0.1 1. BASE +0.1 5 4. 5 60-0.1 2. COLLECTOR 3. EMITTER Ab... See More ⇒
8.11. Size:286K inchange semiconductor
ktc2020d.pdf 

isc Silicon NPN Power Transistor KTC2020D DESCRIPTION High Breakdown Voltage- V = 60V(Min) (BR)CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Ultrahigh-definition CRT display horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNI... See More ⇒
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