MJE13009ZJ Datasheet. Specs and Replacement

Type Designator: MJE13009ZJ  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 80 W

Maximum Collector-Base Voltage |Vcb|: 700 V

Maximum Collector-Emitter Voltage |Vce|: 450 V

Maximum Emitter-Base Voltage |Veb|: 9 V

Maximum Collector Current |Ic max|: 12 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 5 MHz

Forward Current Transfer Ratio (hFE), MIN: 10

Noise Figure, dB: -

Package: TO220S

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MJE13009ZJ datasheet

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MJE13009ZJ

MJE13009ZJ(BR3DD13009ZJ) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220S NPN Silicon NPN transistor in a TO-220S Plastic Package. / Features High VCEO High IC. / Applications High frequency electronic lighting ballast applications. / Equ... See More ⇒

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MJE13009ZJ

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MJE13009ZJ

MJE13009Z9(3DD13009Z9) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 12 A C P (Ta=25 ) 2.0 W C P (Tc=25 ) 100 W C T 150 j ... See More ⇒

 5.3. Size:233K  foshan

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MJE13009ZJ

MJE13009Z7(3DD13009Z7) NPN /SILICON NPN TRANSISTOR Purpose High frequency electronic lighting ballast applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 700 V CBO V 400 V CEO V 9.0 V EBO I 12 A C P (Ta=25 ) 2.0 W C P (Tc=25 ) 100 W C T 150 j ... See More ⇒

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Detailed specifications: KTC2022I, KTC3199M, KTC3205T, L8050, L8050M, L8550, L8550M, M28M, BC547, MMBR911, MMBT5401T, MMBT5551T, MMBTA42T, MMBTA44N, MMBTA44T, MMBTA92T, MMBTA94T

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