S8050M Datasheet, Equivalent, Cross Reference Search
Type Designator: S8050M
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.45 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 25 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.8 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 100 MHz
Collector Capacitance (Cc): 9 pF
Forward Current Transfer Ratio (hFE), MIN: 85
Package: SOT23
S8050M Transistor Equivalent Substitute - Cross-Reference Search
S8050M Datasheet (PDF)
s8050m.pdf
S8050M Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features S8550M Complementary pair with S8550M. / Applications Power amplifier applications. / Equivalent Circuit / Pinnin
s8050mg.pdf
S8050MG Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features S8550MG Complementary pair with S8550MG.HF Product. / Applications Power amplifier applications. / Equivalent Ci
fdms8050et30.pdf
January 2015FDMS8050ET30N-Channel PowerTrench MOSFET30 V, 423 A, 0.65 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Extended TJ rating to 175Cimprove the overall efficiency and to minimize switch node Max rDS(on) = 0.65 m at VGS = 10 V, ID = 55 Aringing of DC/DC converters using either synchronous or conventional switching PWM
fdms8050.pdf
August 2014FDMS8050N-Channel PowerTrench MOSFET 30 V, 200 A, 0.65 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 0.65 m at VGS = 10 V, ID = 55 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 0.9 m at VGS = 4.5 V, ID = 47 Aringing of DC/DC converters using either synchronous or Advanced P
ss8050.pdf
July 2010SS8050NPN Epitaxial Silicon TransistorFeatures 2W Output Amplifier of Portable Radios in Class B Push-pull Operation. Complimentary to SS8550 Collector Current: IC=1.5A Collector Power Dissipation: PC=2W (TC=25C)TO-9211. Emitter 2. Base 3. CollectorAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collecto
ss8050.pdf
SS8050 NPN EPITAXIAL SILICON TRANSISTOR2W OUTPUT AMPLIFIER OF PORTABLETO-92RADIOS IN CLASSB PUSH-PULL OPERATION. Complimentary to SS8550 Collector Current IC=1.5A Collector Dissipation:PC=2W (TC=25 )ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 40 VCollector-Emitter Voltage VCEO 25 VEmitter-Base Voltage VEBO 6
mms8050-l.pdf
MCCMMS8050-LMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311MMS8050-HPhone: (818) 701-4933Fax: (818) 701-4939Features SOT-23 Plastic-Encapsulate TransistorsNPN Silicon Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.5APlastic-Encapsulate Collector-base Voltage 40V Operating
mms8050-h.pdf
MCCMMS8050-LMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311MMS8050-HPhone: (818) 701-4933Fax: (818) 701-4939Features SOT-23 Plastic-Encapsulate TransistorsNPN Silicon Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.5APlastic-Encapsulate Collector-base Voltage 40V Operating
mms8050.pdf
MMS8050Features Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1NPN Silicon Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSPlastic-EncapsulateCompliant. See Ordering Information)Maximum Ratings @ 25C Unless Otherwise SpecifiedTransistor Operating Junction Tempera
mmss8050-h.pdf
MCCMMSS8050-LTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsMMSS8050-HCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features SOT-23 Plastic-Encapsulate TransistorsNPN Silicon Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. Collector-current 1.5APlastic-Encapsulate Collector-base Voltage 40V Operat
ms8050-l.pdf
MCCMicro Commercial Components MS8050-LTM20736 Marilla Street ChatsworthMicro Commercial ComponentsMS8050-HCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features SOT-23 Plastic-Encapsulate TransistorsNPN Silicon Capable of 0.2Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.8APlastic-Encapsulate Collector-base Voltage 40V Operating an
ss8050-c-d.pdf
MCCMicro Commercial ComponentsTMSS8050-C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311SS8050-DPhone: (818) 701-4933Fax: (818) 701-4939Features TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts(Tamb=25OC) of Power Dissipation.NPN Silicon Collector-current 1.5A Collector-base Voltage 40VTransistors Operating and storag
mmss8050w-h-j-l.pdf
MMSS8050W-LMCCTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial Components MMSS8050W-HCA 91311Phone: (818) 701-4933MMSS8050W-JFax: (818) 701-4939Features SOT-323 Plastic-Encapsulate TransistorsNPN Silicon Capable of 0.2 Watts(Tamb=25OC) of Power Dissipation. Collector-current 1.5APlastic-Encapsulate Collector-base Voltage 4
mmss8050-l.pdf
MCCMMSS8050-LTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsMMSS8050-HCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features SOT-23 Plastic-Encapsulate TransistorsNPN Silicon Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. Collector-current 1.5APlastic-Encapsulate Collector-base Voltage 40V Operat
s8050b s8050c s8050d.pdf
MCCMicro Commercial ComponentsTMS8050-B20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311S8050-CPhone: (818) 701-4933Fax: (818) 701-4939 S8050-DFeatures TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25OC) of Power Dissipation.NPN Silicon Collector-current 0.5A Collector-base Voltage 40VTransistors Operating an
ms8050-h.pdf
MCCMicro Commercial Components MS8050-LTM20736 Marilla Street ChatsworthMicro Commercial ComponentsMS8050-HCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features SOT-23 Plastic-Encapsulate TransistorsNPN Silicon Capable of 0.2Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.8APlastic-Encapsulate Collector-base Voltage 40V Operating an
mmss8050-l mmss8050-h.pdf
MCCMMSS8050-LTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsMMSS8050-HCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features SOT-23 Plastic-Encapsulate TransistorsNPN Silicon Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. Collector-current 1.5APlastic-Encapsulate Collector-base Voltage 40V Operatin
fdms8050.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
ss8050.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
s8050.pdf
UNISONIC TECHNOLOGIES CO., LTD S8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC S8050 is a low voltage high current small signal 1NPN transistor, designed for Class B push-pull audio amplifier TO-92and general purpose applications. FEATURES * Collector current up to 700mA * Collector-Emitter voltage up to 20 V
sps8050.pdf
SPS8050Semiconductor Semiconductor NPN Silicon TransistorFeatures Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability Low on resistance : RON=0.6(Max.) (IB=1mA) Ordering Information Type NO. Marking Package Code S
sts8050.pdf
STS8050NPN Silicon TransistorDescriptions PIN Connection High current application C Radio in class B push-pull operation BFeature E Complementary pair with STS8550 TO-92 Ordering Information Type NO. Marking Package Code STS8050 STS8050 TO-92 Absolute Maximum Ratings (Ta=25C) Characteristic Symbol Rating UnitCollector-base voltage VCBO 30 VC
ss8050t.pdf
SS8050TNPN SiliconElektronische Bauelemente General Purpose TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeTO-92FEATURESPower dissipationPCM : 1 WCollector CurrentICM : 1.5 A1Collector-base voltage 23V(BR)CBO : 40 V12 3Operating & storage junction temperature1O OTj, Tstg : - 55 C ~ + 150 C1. EMITTER22. BASS3 . COLLEC
s8050t.pdf
S8050T NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free TO-92FEATURES 4.55 0.2 3.5 0.2 (1.27 Typ.) Complimentary to S8550T 1.25 0.2 Collector Current: IC = 0.5 A 1 2 32.54 0.11: Emitter2: Base3: Collector0.080.43 0.070.46 0.1ABSOLUTE MAXIMUM RATINGS at Ta = 25C
ss8050w.pdf
SS8050WNPN SiliconElektronische BauelementeGeneral Purpose TransistorRoHS Compliant ProductSOT-323FEATURESCollectorDim Min Max33A 1.800 2.200Power dissipation11 B 1.150 1.3502 BasePCM : 0.2 WC 0.800 1.000Collector CurrentD 0.300 0.4002ICM : 1.5 A A G 1.200 1.400EmitterLH 0.000 0.100Collector-base voltageJ 0.100 0.2503V(BR)CBO : 40 VSTo
ss8050.pdf
SS8050 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23FEATURES AL Complimentary to SS8550 33Top View Power Dissipation C B11 2PCM : 0.3W 2K E Collector Current ICM : 1.5A DCollector H J Collector - Base Voltage F GV(BR)CBO : 40V
s8050.pdf
S8050NPN SiliconElektronische BauelementePlastic-Encapsulate TransistorsRoHS Compliant Product A suffix of "-C" specifies halogen & lead-freeSOT-23FEATURESDim Min MaxCollector3A 2.800 3.040Complimentary to S8550B 1.200 1.4001Base C 0.890 1.1102Collector Current: IC=0.5AEmitter D 0.370 0.500G 1.780 2.040AH 0.013 0.100LJ 0.085 0.1773K 0.450 0.600
ss8050.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 SS8050 TRANSISTOR (NPN) 1. EMITTER FEATURES 2. BASE Power Dissipation 3. COLLECTOR PCM : 1 W (TA=25.) : 2 W (TC=25.) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 25 VVEB
s8050.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 S8050 TRANSISTOR (NPN) FEATURES 1.EMITTER Complimentary to S8550 Collector current: IC=0.5A 2.BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3.COLLECTOR Symbol ParameterValue UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emit
mps8050.pdf
SEMICONDUCTOR MPS8050TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION.B CFEATURE Complementary to MPS8550.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGMAXIMUM RATING (Ta=25 )C 3.70 MAXDD 0.45CHARACTERISTIC SYMBOL RATING UNITE 1.00F 1.27VCBOCollector-Base Voltage 40 VG 0.85H 0.45VCEOCollector-Emitter Voltage 25 V _HJ 14.00 + 0.
mps8050s.pdf
SEMICONDUCTOR MPS8050STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. FEATUREEL B LComplementary to MPS8550S.DIM MILLIMETERS_+A 2.93 0.20B 1.30+0.20/-0.15C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30/-0.201G 1.90MAXIMUM RATING (Ta=25)H 0.95J 0.13+0.10/-0.05CHARACTERISTIC SYMBOL RATING UNITK 0.00 ~ 0.10QL 0.55VCBO P PCo
mps8050sc.pdf
SEMICONDUCTOR MPS8050SCTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. FEATUREComplementary to MPS8550SC.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 40 VVCEOCollector-Emitter Voltage 25 VVEBOEmitter-Base Voltage 5 VICCollector Current 1,200 mAPC *Collector Power Dissipation 350 mWTjJunction Te
ss8050.pdf
SS8 050SOT-23 TRANSISTOR(NPN)FEATURES 1. BASE High Collector Current 2. EMITTER Complementary to SS8550 3. COLLECTOR MARKING: Y1MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector
s8050.pdf
S8 050TRANSISTOR(NPN)SOT-23 FEATURES Complimentary to S8550 1. BASE Collector Current: IC=0.8A 2. EMITTER 3. COLLECTOR MARKING: J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.8 A PC Collector
s8050a.pdf
Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM8050FEATURESFEATURES FEATURESLow Frequency Power Amplifier Suitable for Driver Stage of Small Motor Complementary to GM8550 GM8550 (Ta=25 )
ss8050.pdf
Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM8050FEATURESFEATURES FEATURESLow Frequency Power Amplifier Suitable for Driver Stage of Small Motor Complementary to GM8550 GM8550 (Ta=25 )
s8050.pdf
Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM8050FEATURESFEATURES FEATURESLow Frequency Power Amplifier Suitable for Driver Stage of Small Motor Complementary to GM8550 GM8550 (Ta=25 )
s8050 sot-23.pdf
S8050 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to S8550 Collector Current: IC=0.5A MARKING: J3Y Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collect
ss8050 to-92.pdf
SS8050(NPN)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Power dissipation PCM : 1 W (TA=25) : 2 W (TC=25) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 25 VDimensions in inches and (millimeters)VEBO Emitter-Base Voltage 5 VIC C
ss8050 sot-23.pdf
SS8050 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR FeaturesComplimentary to SS8550 MARKING: Y1 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A
s8050 to-92.pdf
S8050(NPN)TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Complimentary to S8550 Collector current: IC=0.5A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol ParameterValue UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A Dimensions in
ss8050.pdf
SS8050(NPN)TO-92 Bipolar TransistorsTO-921.EMITTER2. BASE3. COLLECTORFeatures Power dissipation PCM : 1 W (TA=25) : 2 W (TC=25) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 25 VDimensions in inches and (millimeters)VEBO Emitter-Base Voltage 5 VIC Collector
s8050.pdf
S8050 Silicon Epitaxial Planar TransistorFEATURES A SOT-23 High Collector Current.(IC= 500mA). Dim Min MaxA 2.70 3.10E Complementary To S8550. B 1.10 1.50K BC 1.0 Typical Excellent HFE Linearity. D 0.4 TypicalE 0.35 0.48J High total power dissipation.(PC=300mW). DG 1.80 2.00GH 0.02 0.1J 0.1 TypicalHAPPLICATIONS K 2.20 2.60CAll Dimensions in mm
ss8050lt1.pdf
SS8050LT1NPN General Purpose Transistors3P b Lead(Pb)-Free12SOT-23ValueVCEO 25405.015003002.44170.12540100 5.0100u0.15350.15 u4.0WEITRON 27-Jul-20121/2http://www.weitron.com.twSS8050LT1ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)CharacteristicsSymbol Max UnitMinON CHARACTERISTICSDC Current Gai
ss8050.pdf
SS8050NPN General Purpose TransistorsTO-92P b Lead(Pb)-Free1. EMITTER122. BASE33. COLLECTORMAXIMUM RATINGS(TA=25C unless otherwise noted)Rating Symbol Value UnitVCBO40Collector-Base Voltage VCollector-Emitter Voltage VCEO 25VVEBOEmitter-Base Voltage 5 VCollector Current-ContinuousIC A1.5Total Device Dissipation TA=25CPD W1.0TJ,TstgJunction
s8050.pdf
S8050NPN General Purpose TransistorsTO-921. EMITTER122. BASE33. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating SymbolValue UnitCollector-Emitter Voltage VCEO 25 VdcCollector-Base Voltage VCBO 40VdcEmitter-Base VOltage VEBO5.0 VdcCollector Current IC500 mAdcPD 0.625Total Device Dissipation T =25 C WAJunction Temperature T 150j CStorage, Temper
s8050lt1.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 S8050LT1 TRANSISTOR (NPN) 1. BASE 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 2. 4 PCM: 0.3 W (Tamb=25) 1. 3 Collector current ICM: 0.5 A Collector-base voltage V(BR)CBO: 40 V Unit: mm Operating and storage junction temperature range TJ, Tstg:
ss8050lt1.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SS8050LT1 TRANSISTOR (NPN) SOT-23 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation 2. 4 PCM: 0.3 W ( Tamb=25) 1. 3 Collector current ICM: 1.5 A Collector-base voltage V(BR)CBO: 25 V Operating and storage junction temperature range Unit: mm TJ, Tst
ss8050.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors SS8050 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER 2. BASE Power dissipation PCM : 1 W (TA=25) 3. COLLECTOR : 2 W (TC=25) 1 2 3 MAXIMUM RATINGS* TA=25 unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Volt
s8050.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S8050 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER Power dissipation 2. BASE PCM: 0.625 W (Tamb=25) 3. COLLECTOR Collector current ICM: 0.5 A Collector-base voltage 1 2 3 V(BR)CBO: 40 V Operating and storage junction temperature range TJ, Tstg: -55 to +150
s8050 sot-23 8325.pdf
ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors S8050 TRANSISTOR (NPN) FEATURES Complimentary to S8550 Collector current:Ic=0.5A MARKING:J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units
s8050 to-92.pdf
ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com TO-92 Plastic-Encapsulate Transistors S8050 TRANSISTOR (NPN) FEATURES Complimentary to S8550 Collector current:Ic=0.5A MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO
ss8050 y1 sot-23.pdf
ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors SS8050 TRANSISTOR (NPN) FEATURES Complimentary to SS8550 MARKING:Y1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base
ss8050.pdf
TO-92 Plastic-Encapsulate TransistorsFEATURESTO-92Power dissipationPCM : 1 W (TA=25) 1.EMITTER: 2 W (TC=25) 2.BASEMAXIMUM RATINGS 3.COLLECTORMAXIMUM RATINGSMAXIMUM RATINGS (TA=25 unless otherwise noted)MAXIMUM RATINGS1 2 3Symbol Parameter Value UnitsSymbol Parameter Value UnitsSymbol Parameter Value UnitsSymbol Parameter Value UnitsVCBO 40 VVCBOVCBO Co
s8050a.pdf
S8050A(BR3DG8050AK) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features PC, IC , S8550A(BR3CG8550AK) High PC and IC, complementary pair with S8550A(BR3CG8550AK). / Applications Amplifier of portable radios in class B pu
s8050w.pdf
S8050W(BR3DG8050W) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-323 NPN Silicon NPN transistor in a SOT-323 Plastic Package. / Features S8550W(BR3CG8550W)Complementary pair with S8550W(BR3CG8550W). / Applications Power amplifier applications. / Equivalent Cir
s8050.pdf
S8050 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features PC,IC , S8550 High PC and IC, complementary pair with S8550. / Applications Amplifier of portable radios in class B push-pull operation.
s8050g.pdf
S8050GPlastic-Encapsulate Transistors Simplified outlineS8050G TRANSISTOR NPN TO-92Features Power dissipation 1.EMITTER PCM : 0.625 WTamb=25 2. COLLECTOR Collector current ICM : 0.5 A 3.BASE Collector-base voltage 123 V(BR)CBO : 40 V Operating and storage junction temperature range TJTstg: -55 to +150 Electrical Characteristics
ss8050g.pdf
SS8050GPlastic-Encapsulate Transistors Simplified outlineSS8050G TRANSISTOR NPN TO-92Features Power Dissipation 1.EMITTER PCM : 1 W (TA=25.) 2.BASE : 2 W (TC=25.) 3.COLLECTOR123 Maximum Ratings(Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base Voltage 5 VIC
s8050da.pdf
IC 1.5A Epitaxial siliconVCEO 45V High switching speedPC 1W S8550DA Complementary to S8550DARoHS RoHS product High frequency switch power supplyCommonly power amplifier circuitHigh frequency power transform TO-92
s8050sdb.pdf
TRANSISTOR S8050SDB MAIN CHARACTERISTICS FEATURES IC 500mA Epitaxial silicon VCEO 27V High switching speed PC 625mW RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit High frequency power
s8050d.pdf
TRANSISTOR S8050D MAIN CHARACTERISTICS FEATURES IC 1.5A Epitaxial silicon VCEO 45V High switching speed PC 625mW S8550D Complementary to S8550D RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier
s8050daf.pdf
TRANSISTOR S8050DAF MAIN CHARACTERISTICS FEATURES IC 1.5A Epitaxial silicon VCEO 45V High switching speed PC 625mW S8550A Complementary to S8550A RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier
ss8050.pdf
Product specification NPN Silicon Epitaxial Planar Transistor SS8050 FEATURES Pb Collector Current.(I = 1.5A CLead-free Complementary To SS8550. Collector dissipation:P =300mW(T =25) C CAPPLICATIONS High Collector Current. SOT-23 ORDERING INFORMATION Type No. Marking Package Code SS8050 Y1 SOT-23 : none is for Lead Free package;
gstss8050.pdf
GSTSS8050 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : 25V amplifier and switch. Collector Current : 1.5A Lead(Pb)-FreePackages & Pin Assignments TO-92 Pin Description1 Emitter 2 Base 3 Collector Marking Information P/N Package Rank Part Marking GSTSS8050F TO-92 (B) / (C) / (
gstss8050lt1.pdf
GSTSS8050LT1 NPN General Purpose Transistor Product Description Features This device is designed as a general purpose Collector-Emitter Voltage : 25V amplifier and switch. Collector-Base Voltage : 40V Collector Current : 1500mA Lead(Pb)-FreePackages & Pin Assignments SOT-23 Pin Description1 Base 2 Emitter 3 Collector Marking Information P/N Package Part Markin
ks8050l.pdf
KS8050L NPN Silicon Transistor Descriptions PIN Connection High current application Features Complementary pair with KS8550L Ordering Information Type NO. Marking Package Code KK KS8050L SOT-23 Device Code HFE Grade Year& Week Code AUK Dalian SOT-23 Absolute maximum ratings Ta=25C Characteristic Symbol Ratings Unit Colle
ss8050-l ss8050-h ss8050-j.pdf
SS8050TRANSISTOR(NPN)SOT-23 1. BASE FEATURES 2. EMITTER Complimentary to SS8550 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.3 W Tj Junction Temperat
s8050tl s8050th s8050tj.pdf
S8050TNPN TransistorsMarkingMarking J3Y32 1.Base2.Emitter3.Collector1 Simplified outline(SOT-523) Absolute Maximum Ratings Ta = 25Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 0.5 APC Collector Dissipation 0.2 WTj Junction Temperature 150
ss8050w.pdf
SS8050WNPN Transistors Features3 High Collector Current Complementary to SS8550W21.Base2.Emitter3.Collector1 Simplified outline(SOT-323) Absolute Maximum Ratings Ta = 25Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1.5 APC Collector Power Dissip
s8050b s8050c s8050d.pdf
S8050NPN General Purpose TransistorsTO-921. EMITTER122. BASE33. COLLECTORABSOLUTE MAXIMUM RATINGS (Ta=25 C)Rating SymbolValue UnitCollector-Emitter Voltage VCEO 25 VdcCollector-Base Voltage VCBO 40VdcEmitter-Base VOltage VEBO5.0 VdcCollector Current IC500 mAdcPD 0.625Total Device Dissipation T =25 C WAJunction Temperature T 150j CStorage, Temper
s8050w-l s8050w-h s8050w-j.pdf
S8050WTRANSISTOR (NPN)FEATURES SOT-323 Complimentary to S8550 WCollector Current: IC=0.5A 1. BASE 2. EMITTER 3. COLLECTOR MARKING: J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 0.5 APC Collector Diss
s8050l s8050h.pdf
RUMW S8050TRANSISTOR(NPN) SOT-23 FEATURES Complimentary to S8550 1. BASE Collector Current: IC=0.5A 2. EMITTER 3. COLLECTOR MARKING: J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC C
ss8050l ss8050h ss8050j.pdf
RUMW UMW SS8050SOT-23 Plastic-Encapsulate TransistorsSOT-23 SS8050 TRANSISTOR (NPN) 1. BASE FEATURES 2. EMITTER Complimentary to SS8550 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Conti
ss8050.pdf
SS8050General Purpose Transistors NPN SiliconFeatures Package outline High current capacity in compact package IC = 1.5A. Epitaxial planar type SOT-23 Pb-Free package is available Suffix "-H" indicates Halogen free parts, ex. SS8050-H.(B)(C)(A)0.063 (1.60)0.027 (0.67)0.047 (1.20) 0.013 (0.32)0.108 (2.75)Mechanical data0.083 (2.10) Epoxy:UL94-V0 r
s8050.pdf
S8050General Purpose Transistors NPN SiliconPackage outlineFeatures High current capacity in compact package IC = 0.5A.SOT-23 Epitaxial planar type Pb-Free package is available Suffix "-H" indicates Halogen free parts, ex. S8050-H.(B)(C)(A)0.063 (1.60)0.027 (0.67)0.047 (1.20) 0.013 (0.32)0.108 (2.75)Mechanical data0.083 (2.10) Epoxy:UL94-V0 r
ss8050.pdf
SS8050Transistors SOT-23 Plastic-Encapsulate Transistors(NPN) RHOS FeaturesSOT-23 High Collector Current Complementary to SS8550 Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBO1. BASE VCEO Collector-Emitter Voltage 25 V 2. EMITTER 3. COLLECTOR VEBO Emitter-Ba
s8050.pdf
S8050Transistors SOT-23 Plastic-Encapsulate Transistors(NPN) RHOS SOT-23 FeaturesComplimentary to S8550 Collector Current: IC=0.5A Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Parameter ValueSymbol Units1. BASE 40 VCBO Collector-Base Voltage V 2. EMITTER 25VCEO Collector-Emitter Voltage V 3. COLLECTOR VEBO Emit
ss8050.pdf
SS8050General Purpose Transistors NPN SiliconFEATURES Complimentary to SS8550 SOT-23 MARKING: Y1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBOVCEO Collector-Emitter Voltage 25 V V Emitter-Base Voltage 5 V EBOI Collector Current 1.5 A CP Collector Power Dissipation 300 mW CR Thermal Resistance F
s8050.pdf
S8050General Purpose Transistors NPN SiliconFEATURES Complimentary to S8550 SOT-23 MARKING: J3YMAXIMUM RATINGS (Ta=25 unless otherwise noted)Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBOVCE Collector-Emitter Voltage 25 V OV Emitter-Base Voltage 5 V EBOI Collector Current 500 mA CP Collector Power Dissipation 300 mW CR Thermal Resistance F
ss8050.pdf
NPN SMD TransistorsFormosa MSSS8050General Purpose Transistors NPN SiliconPackage outlineSOT-23Features High current capacity in compact package IC = 1.5A. Epitaxial planar type Pb-Free package is available Suffix "-H" indicates Halogen free parts, ex. SS8050-H.(B)(C)(A)0.063 (1.60)0.027 (0.67)0.047 (1.20) 0.013 (0.32)0.108 (2.75)Mechanical data
ss8050.pdf
SS8050SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N )Features SOT- 23Complimentary to SS8550Collector Current: IC=1.5A Marking: Y1Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V V Collector-Emitter Voltage 25 V CEOCV Emitter-Base Voltage 5 V EBOI Collector Current C 1.5 A P Collector Power Dissipation 300 mW CB E
s8050.pdf
S8050HD-ST0.4SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N )Features SOT- 23Complimentary to S8550 Collector Current: IC=0.5A Marking: J3YSymbol Parameter Value Unit VCBO Collector-Base Voltage 40 V V Collector-Emitter Voltage 25 V CEOCV Emitter-Base Voltage 5 V EBOI Collector Current 500 mA CP Collector Power Dissipation 300 mW
ss8050.pdf
SS8050Silicon Epitaxial Planar TransistorFEATURES Collector Current.(I = 1.5A C Complementary To SS8550. Collector Power Dissipation:P =2W(T =25) C CAPPLICATIONS High Collector Current. TO-92 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Ratings Units Collector-Base Voltage V 40 V CBO Collector-Emitter Voltage V 25
s8050.pdf
S8050NPN Silicon General Purpose TransistorTO-92FEATURES 4.55 0.2 3.5 0.2 (1.27 Typ.) Complimentary to S8550 1.25 0.2 Collector Current: IC = 0.5 A 1 2 32.54 0.11: Emitter2: Base3: Collector0.080.43 0.070.46 0.1ABSOLUTE MAXIMUM RATINGS at Ta = 25C Parameter Symbol Ratings UnitCollector to Base Voltage VCBO 40 VCollector to Emitter Voltage VCEO 25 VEmitt
ss8050.pdf
SS8 050SOT-23 TRANSISTOR(NPN)FEATURES 1. BASE High Collector Current 2. EMITTER Complementary to SS8550 3. COLLECTOR MARKING: Y1MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector
s8050.pdf
S8 050TRANSISTOR(NPN)SOT-23 FEATURES Complimentary to S8550 1. BASE Collector Current: IC=0.5A 2. EMITTER 3. COLLECTOR MARKING: J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector
ss8050-ms.pdf
www.msksemi.comSS8050-MSSemiconductor CompianceSemiconductor Compiance TRANSISTOR (NPN) FEATURES Complimentary to SS8550-MS1. BASE MARKING: Y1 2. EMITTERSOT23 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector
s8050-ms.pdf
www.msksemi.comS8050-MSSemiconductor CompianceSemiconductor CompianceTRANSISTOR (NPN)FEATURES Complimentary to S8550-MS Collector Current: IC=0.5A1. BASE2. EMITTERMARKING: J3Y SOT23 3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBOV Collector-Emitter Voltage 25 V CEOV Emitter-Ba
ss8050.pdf
SS8050PLASTIC-ENCAPSULATE TRANSISTORS NPN Silicon FEATURES Collector CurrentIC = 1.5A C E B MECHANICAL DATA Available in SOT-23, SOT-323, TO-92 PackageC SolderabilityMIL-STD-202, Method 208 E Full RoHS Compliance B E B C ORDERING INFORMATION PART NUMBER PACKAGE SHIPPING MARKING CODESS8050--T3 SOT-23 Tape ReelY1SS8050--
s8050l-t3 s8050h-t3.pdf
S8050PLASTIC-ENCAPSULATE TRANSISTORS NPN Silicon FEATURES Collector CurrentIC = 0.5A MECHANICAL DATA C E Available in SOT-23 Package SolderabilityMIL-STD-202, Method 208 Full RoHS Compliance B ORDERING INFORMATION PART NUMBER PACKAGE SHIPPING MARKING CODES8050--T3 SOT-23 Tape ReelJ3Y Notes: 1. : none is for Lead Free package;
s8050-l s8050-h s8050-j.pdf
S8050 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features S8550 ; Complementary to S8550 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package
ss8050-l ss8050-h ss8050-j.pdf
Jingdao Microelectronics co.LTD SS8050 SS8050SOT-23NPN TRANSISTOR3FEATURES Complimentary to SS8550 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2SymbolParameter Value Unit1.BASECollectorBase Voltage VCBO 40 V2.EMITTERCollectorEmitter Voltage VCEO 25 V3.COLLECTOREmitterBase Voltage VEBO 5 V
s8050-l s8050-h s8050-j.pdf
Jingdao Microelectronics co.LTD S8050S8050SOT-23NPN TRANSISTOR3FEATURES Complimentary to S8550 Collector Current: IC=0.5A 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2SymbolParameter Value Unit1.BASECollectorBase Voltage VCBO 40 V2.EMITTERCollectorEmitter Voltage VCEO 25 V3.COLLECTOREmi
ss8050-l ss8050-h ss8050-j.pdf
SS8 050SOT-23 TRANSISTOR(NPN)FEATURES 1. BASE High Collector Current 2. EMITTER Complementary to SS8550 3. COLLECTOR MARKING: Y1MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector
s8050-l s8050-h.pdf
S8 050TRANSISTOR(NPN)SOT-23 FEATURES Complementary to S8550 1. BASE Collector Current: IC=0.5A 2. EMITTER 3. COLLECTOR MARKING: J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector
ss8050w-l ss8050w-h ss8050w-j.pdf
SS8050WSS8050W TRANSISTOR (NPN)FEATURES Complimentary to SS8550W MARKING: Y1 SOT323 3. COLLECTOR 1. BASE 2. EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0
ss8050.pdf
Integrated inOVP&OCP productsprovider SS8050SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES Complimentary to SS8550 MARKING:Y1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - 40 V VCEO Collector-Emitter Vol
s8050.pdf
Integrated inOVP&OCP productsprovider S8050 TRANSISTOR (NPN)FEATURES SOT-23 Complimentary to S8550 Collector Current: IC=0.8A 1BASE 2EMITTER 3COLLECTOR MARKING: J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collecto
s8050 s8050l s8050h s8050j.pdf
S8050 SOT-23 NPN Transistors32 1.Base2.Emitter1 3.Collector FeaturesCollector Current: IC=0.5A Simplified outline(SOT-23)Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating UnitCollector-Base Voltage VCBO 40 VCollector-Emitter Voltage VCEO 25 VEmitter-Base Voltage VEBO 5 VCollector Current -Continuous IC 0.5 ACollector Dissipation PC 0.3 WJunction Tempe
ss8050 ss8050-l ss8050-h ss8050-j.pdf
SS8050 SOT-23 NPN Transistors321.BaseFeatures 2.Emitter1 3.CollectorCollector Current: IC=1.5A Simplified outline(SOT-23)Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 VEmitter-Base Voltage VEBO 5 VCollector Current -Continuous IC 1.5 ACollector Dissipation PC 0.3 WJunction Tempera
ss8050l ss8050h ss8050j.pdf
SS8050 TRANSISTOR (NPN) SOT-323 FEATURES Complimentary to SS8550 1. BASE 2. EMITTER MARKING: Y1 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBOVCEO Collector-Emitter Voltage 25 V V Emitter-Base Voltage 5 V EBOI Collector Current 1.5 A CP Collector Power Dissipation 250 mW CR Therm
ss8050.pdf
SS8050SOT-23 Plastic-Encapsulate Transistors SS8050 TRANSISTOR (NPN) FEATURES Complimentary to SS8550 MARKING:Y1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - 40 V VCEO Collector-Emitter Voltage -
s8050.pdf
S8050SOT-23 Plastic-Encapsulate Transistors S8050 TRANSISTOR (NPN) FEATURES Complimentary to S8550 Collector current:Ic=0.5A MARKING:J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - 40 V VCEO Collector-Emitter Voltage
s8050l s8050h s8050j.pdf
S8050 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features S8550 ; Complementary to S8550 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package
ss8050l ss8050h ss8050j.pdf
SS8050 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features SS8550 ; Complementary to SS8550 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package
ss8050w-l ss8050w-h ss8050w-j.pdf
SS8050WSS8050WSS8050WSS8050WTRANSISTOR(NPN)SS8 0 50 WSOT323 3FEATURES Complimentary to SS8550W 1. BASE 1 2. EMITTER 23. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Co
ss8050.pdf
SS8050SS8050 TRANSISTOR (NPN) SS8050FEATURES Complimentary to SS8550 SOT-23 1BASE MARKING: Y1 2EMITTER 3COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 1.5 APC Collector Power Dissipation 0
s8050.pdf
S8050S8050 TRANSISTOR (NPN) FEATURES Complimentary to S8550 SOT-23 Collector Current: IC=0.5A 1BASE 2EMITTER MARKING: J3Y 3COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 0.5 APC Collecto
s8050-l s8050-h.pdf
RoHS RoHSCOMPLIANT COMPLIANTS8050-L THRU S8050-H NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Marking: S8050-L J3YL S8050-H J3Y Maximum Ratings (Ta=25 unless otherwise noted) Item Symbol Unit Conditions Value Coll
ss8050-l ss8050-h.pdf
RoHS COMPLIANT SS8050-L THRU SS8050-H NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moitsure Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package: SOT-23 Molding compound meets UL 9
s8050.pdf
TH09/2479TH97/2478 IATF 0113686SGS TH07/1033www.eicsemi.comS8050SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesCollector Current: IC=0.5A1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter 3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO 40 VCollector-Emitter Voltage VCEO 25 VEmitter-B
ss8050-1.5a.pdf
SS8050-1.5ANPN TransistorFeatures SOT-23 For Switching and AF Amplifier Applications.Equivalent Circuit 1.Base 2.Emitter 3.Collector3.CollectorMarking Code : Y11.Base2. Emitter.Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified.Parameter Symbol Value UnitCollector Base Voltage V 40 VCBOCollector Emitter Voltage V 25 VCEO
ss8050.pdf
SS8050 SS8050 NPN Transistors General description SOT-23 Plastic-Encapsulate Transistors FEATURES Complementary to SS8550 Power Dissipation of 300mW High Stability and High Reliability MECHANICAL DATA SOT-23 Small Outline Plastic Package Epoxy UL: 94V-0 Mounting Position: Any Marking: Y1 Maximum Ratings & Thermal Characteristics TA = 25C un
s8050.pdf
S8050 S8050 NPN Transistors General description SOT-23 Plastic-Encapsulate Transistors FEATURES Complementary to S8550 Power Dissipation of 300mW High Stability and High Reliability MECHANICAL DATA SOT-23 Small Outline Plastic Package Epoxy UL: 94V-0 Mounting Position: Any Marking: J3Y Maximum Ratings & Thermal Characteristics TA = 25C unle
s8050t.pdf
S8050T TRANSISTOR (NPN) SOT-523 FEATURES Complimentary to S8550T1. BASE Collector Current: IC=0.5A 2. EMITTER 3. COLLECTOR MARKING: J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 0.5 APC Collector Diss
ss8050w.pdf
SS8050W TRANSISTOR (NPN)SOT323 FEATURES Complimentary to SS8550W 1. BASE 2. EMITTER 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.2 W
ss8050.pdf
SS8050 TRANSISTOR (NPN) SOT-23 FEATURES Complimentary to SS8550 1BASE 2EMITTER 3COLLECTOR MARKING: Y1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.3 W
s8050.pdf
S8050 TRANSISTOR (NPN) FEATURES SOT-23 Complimentary to S8550 Collector Current: IC=0.5A 1BASE 2EMITTER 3COLLECTOR MARKING: J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector
s8050.pdf
GUANGDONG FENGHUA SEMICONDUCTOR TECHNOLOGY CO.,LTDS8050 10 NPN TransistorNO.10,2nd Nanxiang Road, Guangzhou Science Park,Guangzhou City,Guangdong Province,China. Applications:. General purpose applicationswitching
ss8050.pdf
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDSS8050FEATURES Low Frequency Power Amplifier Suitable for Driver Stage of Small Motor Complementary to SS8550 SS8550 (Ta=25)CHARACTERISTIC Symbol Rating Unit Collector-Base VoltageVCB
s8050.pdf
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDS8050FEATURESFEATURESFEATURESFEATURES Low Frequency Power Amplifier Suitable for Driver Stage of Small Motor Complementary to S8550 S8550 (Ta=25 )(Ta=25 )(T =25)(T =25 )aaCHARACTERISTIC Symbol Rating Unit
ss8050.pdf
SS8050NPN GENERAL PURPOSE SWITCHING TRANSISTOR25Volts POWER 300mWattsVOLTAGEFEATURESNPN epitaxial silicon, planar design. Collector-emitter voltage VCE=25V.Collector current IC=1.5A.ansition frequency fT>100MHz @ TrIC=50mAdc, VCE=10Vdc, f=30MHz.In compliance with EU RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, Plastic3Terminals: Solde
s8050.pdf
S8050NPN GENERAL PURPOSE SWITCHING TRANSISTOR25Volts POWER 300mWattsVOLTAGEFEATURESNPN epitaxial silicon, planar design. Collector-emitter voltage VCE=25V.Collector current IC=0.5A.ansition frequency fT>150MHz @ TrIC=20mAdc, VCE=6Vdc, f=30MHz.In compliance with EU RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, Plastic3Terminals: Soldera
ss8050.pdf
SS8050BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to SS8550 High Collector Current Surface Mount deviceSOT-323MECHANICAL DATA Case: SOT-323 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Value UnitCollector-Base
s8050.pdf
S8050BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to S8550 Excellent h LinearityFE High Collector Current Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol
ss8050.pdf
NPN SS8050SS8050 TRANSISTOR (NPN) SOT-23 FEATURES Complimentary to SS8550 1BASE 2EMITTER 3COLLECTOR MARKING: Y1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Cu
s8050.pdf
NPN S8050S8050 TRANSISTOR (NPN)FEATURES SOT-23 Complimentary to S8550 Collector Current: IC=0.5A 1BASE 2EMITTER 3COLLECTOR MARKING: J3Y MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Volt
s8050.pdf
S8050SOT-23 Plastic-Encapsulate TransistorsTRANSISTOR (NPN) FEATURES Complimentary to S8550 Collector Current: IC=0.5A MARKING: J3Y MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 40 V CBOSOT-23 V Collector-Emitter Voltage 25 V CEOVEBO Emitter-Base Voltage 5 V IC Collector Current 500 mA 1. BASE 2. EMITT
ss8050t23.pdf
SS8050T23NPN Transistor ROHS FEATURE NPN Transistor Collector Current: IC=1.5A MARKING:Y1SOT-23Absolute maximum ratings (Ta=25 unless otherwise noted)Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 1.5 APC Collector Power Dissipation 0.3 W Tj
ss8050.pdf
SS8050 MOTNPN TRANSISTOR NPN NPN High Voltage Transistor SMD SS8050 NPN, BEC Transistor Polarity: NPN General Purpose Transistors Transistor pinout: BEC SOT-23 Package Marking Code: Y1 hFE: 100~200, 200~300 Ldeal for Medium Power Amplification and Switching Inner circuit
s8050.pdf
MOT S8050NPN-TRANSISTORNPN NPN Plastic-Encapsulate Transistors SMDHigh breakdown voltageS8050Low collector-emitter saturation voltageTransistor Polarity: NPNTransistor pinout: BECMMBT8050LT1SOT-23 PackageMarking Code: J3YInner circuit 8050 Series
mmbtss8050l mmbtss8050h mmbtss8050j.pdf
MMBTSS8050NPN Silicon General Purpose Transistors FeaturesSOT23 High current capacity in compact package IC = 1.5A. Epitaxial planar type Pb-Free package is availableMechanical data Epoxy:UL94-V0 rated flame retardant(B)(C) Case : Molded plastic, SOT-23(A) Terminals : Solder plated, solderable perMIL-STD-750, Method 20260.063 (1.60)0.027 (0.67)
s8050l s8050h s8050j.pdf
S8050 Features Complimentary to S8550 Collector Current: IC=0.5A SOT-23Marking Code:J3YADim Min MaxCA0.37 0.51B C B1.20 1.40C2.30 2.50TOP VIEWB ED0.89 1.03DEGE0.45 0.60G1.78 2.05H H2.80 3.00JMAXIMUM RATINGS (Ta=25 unless otherwise noted) 0.013 0.10KK0.903 1.10SymbolParameter
ss8050l ss8050h ss8050j.pdf
SS8050 Features Complimentary to SS8550 Collector Current: IC=1.5A SOT-23AMarking Code:Y 1Dim Min MaxCA0.37 0.51B C B1.20 1.40C2.30 2.50TOP VIEWB ED0.89 1.03DEGE0.45 0.60G1.78 2.05H H2.80 3.00 J0.013 0.10KMAXIMUM RATINGS (Ta=25 unless otherwise noted) K0.903 1.10JL0.45 0.61
ss8050b ss8050c ss8050d ss8050e.pdf
Jiangsu Weida Semiconductor Co., Ltd.SS8050NPN General Purpose TransistorsTO-92P b Lead(Pb)-Free1. EMITTER122. BASE33. COLLECTORMAXIMUM RATINGS(TA=25C unless otherwise noted)Rating Symbol Value UnitVCBO40Collector-Base Voltage VCollector-Emitter Voltage VCEO 25VVEBOEmitter-Base Voltage 5 VCollector Current-ContinuousIC A1.5Total Device Dissipation
s8050b s8050c s8050d.pdf
Jiangsu Weida Semiconductor Co., Ltd.S8050NPN General Purpose TransistorsTO-921. EMITTER122. BASE33. COLLECTORABSOLUTE MAXIMUM RATINGS(Ta=25 C)Rating Symbol Value UnitVCEOCollector-Emitter Voltage 25 VdcVCBOCollector-Base Voltage 40 VdcVEBOEmitter-Base VOltage 5.0 VdcCollector Current IC 500 mAdcPDTotal Device Dissipation T =25 C 0.625 WAJunction Te
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , C3198 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
