ST2SB1188U Specs and Replacement

Type Designator: ST2SB1188U

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 2 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 32 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 2 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Collector Capacitance (Cc): 50 pF

Forward Current Transfer Ratio (hFE), MIN: 82

Noise Figure, dB: -

Package: SOT89

 ST2SB1188U Substitution

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ST2SB1188U datasheet

 ..1. Size:558K  semtech

 st2sb1188u.pdf pdf_icon

ST2SB1188U

ST 2SB1188U PNP Silicon Epitaxial Planar Transistor Medium power transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 32 V Emitter Base Voltage -VEBO 5 V Collector Current - DC -IC 2 A Collector Current - Pulse 1) -ICP 3 1) A 0.5 PC W Collector Power Dissipation 2 2) Junction Temper... See More ⇒

 7.1. Size:349K  semtech

 st2sb1151t.pdf pdf_icon

ST2SB1188U

ST 2SB1151T PNP Epitaxial Silicon Power Transistor E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 60 V Emitter Base Voltage -VEBO 7 V Collector Current (DC) -IC 5 A Collector Current (PW = 10 ms) -ICP 8 A Base Current -IB 1 A O Collector Power Dissipation (a... See More ⇒

 7.2. Size:539K  semtech

 st2sb1132u.pdf pdf_icon

ST2SB1188U

ST 2SB1132U PNP SILICON EPITAXIAL MEDIUM POWER TRANSISTOR Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 32 V Emitter Base Voltage -VEBO 5 V Collector Current - DC -IC 1 A Collector Current - Pulse 1) -ICP 2 A 0.5 Ptot W Total Power Dissipation 2 2) Junction Temperature TJ 150 Stora... See More ⇒

 7.3. Size:862K  semtech

 st2sb1124u.pdf pdf_icon

ST2SB1188U

ST 2SB1124U PNP Silicon Epitaxial Planar Transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 60 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 6 V Collector Current -IC 3 A Collector Current (Pulse) -ICP 6 A 0.5 PC W Collector Power Dissipation 1 1) Junction Temperature Tj 150 Storage Temperatu... See More ⇒

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Detailed specifications: ST2SA1900U, ST2SA2060U, ST2SA2071U, ST2SA683, ST2SA684, ST2SB1124U, ST2SB1132U, ST2SB1151T, 2SC2625, ST2SB1386U, ST2SB1561U, ST2SB596, ST2SB772R, ST2SB772T, ST2SB772U, ST2SB9435U, ST2SC1383

Keywords - ST2SB1188U pdf specs

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