ST2SB772T Datasheet and Replacement

ST 2SB772T PNP Silicon Epitaxial Power Transistor These devices are intended for use in audio frequency power amplifier and low speed switching applications ECBTO-126 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 30 V Emitter Base Voltage -VEBO 5 V Collector Current

ST 2SB772R PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 6 V -IC Collector Current 3 A OTotal Power Dissipati

ST 2SB772U PNP SILICON EPITAXIAL POWER TRANSISTOR These devices are intended for use in audio frequency power amplifier and low speed switching applications Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 5 V -IC Collector Current 3 A-ICPPeak Collector Curre

ST 2SB1386U PNP Silicon Epitaxial Planar Transistor Low frequency transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 30 VCollector Emitter Voltage -VCEO 20 VEmitter Base Voltage -VEBO 6 VCollector Current - DC -IC 5 A Collector Current - Pulse 1) -ICP 10 0.5 PC W Collector Power Dissipation2 2) Junction Tempera

ST 2SB1151T PNP Epitaxial Silicon Power Transistor ECBTO-126 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 60 VCollector Emitter Voltage -VCEO 60 VEmitter Base Voltage -VEBO 7 VCollector Current (DC) -IC 5 ACollector Current (PW = 10 ms) -ICP 8 ABase Current -IB 1 A OCollector Power Dissipation (a

ST 2SB9435U PNP Silicon Epitaxial Power Transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 45 VCollector Emitter Voltage -VCEO 30 VEmitter Base Voltage -VEBO 6 VCollector Current -IC 3 APeak Collector Current -ICM 5 ABase Current -IB 1 A1)Total Power Dissipation at Ta = 25 Ptot 0.72 WTotal Power Dissipation at Tc =

ST 2SB596 PNP Epitaxial Silicon Power Transistor for power amplifier applications TO-220 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit80 VCollector Base Voltage -VCBO 80 VCollector Emitter Voltage -VCEO 5 VEmitter Base Voltage -VEBO 4 ACollector Current -IC 0.4 ABase Current -IB OPower Dissipation (Tc = 25 C) PC 30 WOJu

ST 2SB1561U PNP Silicon Epitaxial Planar Transistor Medium Power Transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 60 VCollector Emitter Voltage -VCEO 60 VEmitter Base Voltage -VEBO 6 VCollector Current - DC -IC 2 A Collector Current - Pulse 1) -ICP 6 0.5 Total Power Dissipation Ptot W 2 2) Junction Temperature T

ST 2SB1188U PNP Silicon Epitaxial Planar Transistor Medium power transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 32 VEmitter Base Voltage -VEBO 5 VCollector Current - DC -IC 2 A Collector Current - Pulse 1) -ICP 3 1) A 0.5 PC W Collector Power Dissipation2 2) Junction Temper

ST 2SB1132U PNP SILICON EPITAXIAL MEDIUM POWER TRANSISTOR Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 32 VEmitter Base Voltage -VEBO 5 VCollector Current - DC -IC 1 A Collector Current - Pulse 1) -ICP 2 A 0.5 Ptot W Total Power Dissipation2 2) Junction Temperature TJ 150 Stora

ST 2SB1124U PNP Silicon Epitaxial Planar Transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage -VCBO 60 VCollector Emitter Voltage -VCEO 50 VEmitter Base Voltage -VEBO 6 VCollector Current -IC 3 A Collector Current (Pulse) -ICP 6 A 0.5 PC W Collector Power Dissipation1 1) Junction Temperature Tj 150 Storage Temperatu