STBD138T Datasheet, Equivalent, Cross Reference Search
Type Designator: STBD138T
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 12.5 W
Maximum Collector-Base Voltage |Vcb|: 60 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 1.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO126
STBD138T Transistor Equivalent Substitute - Cross-Reference Search
STBD138T Datasheet (PDF)
stbd136t stbd138t stbd140t.pdf
BD136T / BD138T / BD140T PNP PLASTIC POWER TRANSISTOR Medium power linear and switching applications ECB TO-126 Plastic Package OAbsolute Maximum Ratings (Ta=25 C) Value Parameter Symbol Unit BD136T BD138T BD140T-VCBO Collector Base Voltage 45 60 100 V-VCEO Collector Emitter Voltage 45 60 80 V-VEBO Emitter Base Voltage 5 VCollector Current -IC 1.5 ABase Cur
stbd135t stbd137t stbd139t.pdf
BD135T / BD137T / BD139T NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are designed as Audio Amplifier and Drivers Utilizing. ECB TO-126 Plastic Package OAbsolute Maximum Ratings (Ta=25 C) Value Parameter Symbol Unit BD135T BD137T BD139TCollector Emitter Voltage VCEO 45 60 80 VCollector Emitter Voltage ( RBE = 1 K) VCER 45 60 100 VCollector Base Vo
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
