STBD139T Specs and Replacement

Type Designator: STBD139T

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 12.5 W

Maximum Collector-Base Voltage |Vcb|: 100 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 1.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 40

Noise Figure, dB: -

Package: TO126

 STBD139T Substitution

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STBD139T datasheet

 ..1. Size:454K  semtech

 stbd135t stbd137t stbd139t.pdf pdf_icon

STBD139T

BD135T / BD137T / BD139T NPN SILICON EPITAXIAL POWER TRANSISTOR These devices are designed as Audio Amplifier and Drivers Utilizing. E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta=25 C) Value Parameter Symbol Unit BD135T BD137T BD139T Collector Emitter Voltage VCEO 45 60 80 V Collector Emitter Voltage ( RBE = 1 K ) VCER 45 60 100 V Collector Base Vo... See More ⇒

 8.1. Size:367K  semtech

 stbd136t stbd138t stbd140t.pdf pdf_icon

STBD139T

BD136T / BD138T / BD140T PNP PLASTIC POWER TRANSISTOR Medium power linear and switching applications E C B TO-126 Plastic Package O Absolute Maximum Ratings (Ta=25 C) Value Parameter Symbol Unit BD136T BD138T BD140T -VCBO Collector Base Voltage 45 60 100 V -VCEO Collector Emitter Voltage 45 60 80 V -VEBO Emitter Base Voltage 5 V Collector Current -IC 1.5 A Base Cur... See More ⇒

Detailed specifications: ST2SD882T, ST2SD882U, ST2SD882U-P, ST8050, STBD135T, STBD136T, STBD137T, STBD138T, TIP32C, STBD140T, STBD909, STBD910, STBD911, STBD912, STBDW42, STBDW47, STH1061

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