STBD912 Datasheet, Equivalent, Cross Reference Search
Type Designator: STBD912
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO220
STBD912 Transistor Equivalent Substitute - Cross-Reference Search
STBD912 Datasheet (PDF)
stbd910 stbd912.pdf
ST BD910 / ST BD912 PNP Complementary Silicon Power Transistors TO-220 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Value Parameter Symbol Unit ST BD910 ST BD912 Collector Base Voltage -VCBO 80 100 VCollector Emitter Voltage -VCEO 80 100 VEmitter Base Voltage -VEBO 5 VCollector Current -IC 15 ABase Currentt -IB 5 AOTotal Power Dissipation @ TC 25 C Ptot 9
stbd909 stbd911.pdf
ST BD909 / ST BD911 NPN Complementary Silicon Power Transistors TO-220 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Value Parameter Symbol Unit ST BD909 ST BD911 Collector Base Voltage VCBO 80 100 VCollector Emitter Voltage VCEO 80 100 VEmitter Base Voltage VEBO 5 VCollector Current IC 15 ABase Currentt IB 5 AOTotal Power Dissipation @ TC 25 C Ptot 90 W
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
