STBD912 Specs and Replacement
Type Designator: STBD912
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 90 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 3 MHz
Forward Current Transfer Ratio (hFE), MIN: 40
Package: TO220
STBD912 Substitution
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STBD912 datasheet
ST BD910 / ST BD912 PNP Complementary Silicon Power Transistors TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Value Parameter Symbol Unit ST BD910 ST BD912 Collector Base Voltage -VCBO 80 100 V Collector Emitter Voltage -VCEO 80 100 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 15 A Base Currentt -IB 5 A O Total Power Dissipation @ TC 25 C Ptot 9... See More ⇒
ST BD909 / ST BD911 NPN Complementary Silicon Power Transistors TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Value Parameter Symbol Unit ST BD909 ST BD911 Collector Base Voltage VCBO 80 100 V Collector Emitter Voltage VCEO 80 100 V Emitter Base Voltage VEBO 5 V Collector Current IC 15 A Base Currentt IB 5 A O Total Power Dissipation @ TC 25 C Ptot 90 W ... See More ⇒
Detailed specifications: STBD136T, STBD137T, STBD138T, STBD139T, STBD140T, STBD909, STBD910, STBD911, B647, STBDW42, STBDW47, STH1061, STTIP122, STTIP31C, STTIP32C, STTIP42C, FJAF6806D
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