STBDW47 Specs and Replacement
Type Designator: STBDW47
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 85 W
Maximum Collector-Base Voltage |Vcb|: 100 V
Maximum Collector-Emitter Voltage |Vce|: 100 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 15 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Collector Capacitance (Cc): 300 pF
Forward Current Transfer Ratio (hFE), MIN: 1000
Package: TO220
STBDW47 Substitution
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STBDW47 datasheet
ST BDW47 PNP Silicon Planar Darlington Power Transistor General purpose and low speed switching application TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Emitter Voltage -VCEO 100 V Collector Base Voltage -VCBO 100 V Emitter Base Voltage -VEBO 5 V Collector Current Continuous -IC 15 A Base Currentt -IB 0.5 A O Total P... See More ⇒
ST BDW42 NPN Silicon Planar Darlington Power Transistors General Purpose and Low Speed Switching Application TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Emitter Voltage VCEO 100 V Collector Base Voltage VCBO 100 V Emitter Base Voltage VEBO 5 V Collector Current Continuous IC 15 A Base Currentt IB 0.5 A O Total Powe... See More ⇒
Detailed specifications: STBD138T, STBD139T, STBD140T, STBD909, STBD910, STBD911, STBD912, STBDW42, D667, STH1061, STTIP122, STTIP31C, STTIP32C, STTIP42C, FJAF6806D, FJAF6808D, FJAF6810
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