All Transistors. STH1061 Datasheet

 

STH1061 Datasheet and Replacement


   Type Designator: STH1061
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 35
   Noise Figure, dB: -
   Package: TO220
 

 STH1061 Substitution

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STH1061 Datasheet (PDF)

 ..1. Size:437K  semtech
 sth1061.pdf pdf_icon

STH1061

ST H1061 NPN Plastic Power Transistor Low frequency power amplifier TO-220 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Emitter Voltage VCEO 50 V Collector Base Voltage VCBO 50 VEmitter Base Voltage VEBO 4 VCollector Current IC 3 APower Dissipation Ptot 25 WOJunction Temperature Tj 150 C OStorage Temperature Range TS -45

 9.1. Size:337K  st
 stw10nc60 sth10nc60fi.pdf pdf_icon

STH1061

STW10NC60STH10NC60FIN-CHANNEL 600V - 0.6 - 10A - TO-247/ISOWATT218PowerMeshII MOSFETTYPE VDSS RDS(on) IDSTW10NC60 600 V

 9.2. Size:243K  st
 sth10n.pdf pdf_icon

STH1061

STH10NA50/FISTW10NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTH10NA50 500 V

 9.3. Size:386K  st
 sth10na50.pdf pdf_icon

STH1061

STH10NA50/FISTW10NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTH10NA50 500 V

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Datasheet: STBD139T , STBD140T , STBD909 , STBD910 , STBD911 , STBD912 , STBDW42 , STBDW47 , BD777 , STTIP122 , STTIP31C , STTIP32C , STTIP42C , FJAF6806D , FJAF6808D , FJAF6810 , FJAF6810D .

History: PN5134 | TA2458 | TSA114ENND03 | BUT211 | BUT18

Keywords - STH1061 transistor datasheet

 STH1061 cross reference
 STH1061 equivalent finder
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