STH1061 Datasheet. Specs and Replacement

Type Designator: STH1061  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 25 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 3 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 8 MHz

Forward Current Transfer Ratio (hFE), MIN: 35

Noise Figure, dB: -

Package: TO220

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STH1061 datasheet

 ..1. Size:437K  semtech

 sth1061.pdf pdf_icon

STH1061

ST H1061 NPN Plastic Power Transistor Low frequency power amplifier TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Emitter Voltage VCEO 50 V Collector Base Voltage VCBO 50 V Emitter Base Voltage VEBO 4 V Collector Current IC 3 A Power Dissipation Ptot 25 W O Junction Temperature Tj 150 C O Storage Temperature Range TS -45... See More ⇒

 9.1. Size:337K  st

 stw10nc60 sth10nc60fi.pdf pdf_icon

STH1061

STW10NC60 STH10NC60FI N-CHANNEL 600V - 0.6 - 10A - TO-247/ISOWATT218 PowerMesh II MOSFET TYPE VDSS RDS(on) ID STW10NC60 600 V ... See More ⇒

 9.2. Size:243K  st

 sth10n.pdf pdf_icon

STH1061

STH10NA50/FI STW10NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STH10NA50 500 V ... See More ⇒

 9.3. Size:386K  st

 sth10na50.pdf pdf_icon

STH1061

STH10NA50/FI STW10NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STH10NA50 500 V ... See More ⇒

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Detailed specifications: STBD139T, STBD140T, STBD909, STBD910, STBD911, STBD912, STBDW42, STBDW47, BD333, STTIP122, STTIP31C, STTIP32C, STTIP42C, FJAF6806D, FJAF6808D, FJAF6810, FJAF6810D

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