All Transistors. STH1061 Datasheet

 

STH1061 Datasheet, Equivalent, Cross Reference Search


   Type Designator: STH1061
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 3 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 8 MHz
   Forward Current Transfer Ratio (hFE), MIN: 35
   Noise Figure, dB: -
   Package: TO220

 STH1061 Transistor Equivalent Substitute - Cross-Reference Search

   

STH1061 Datasheet (PDF)

 ..1. Size:437K  semtech
sth1061.pdf

STH1061 STH1061

ST H1061 NPN Plastic Power Transistor Low frequency power amplifier TO-220 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Emitter Voltage VCEO 50 V Collector Base Voltage VCBO 50 VEmitter Base Voltage VEBO 4 VCollector Current IC 3 APower Dissipation Ptot 25 WOJunction Temperature Tj 150 C OStorage Temperature Range TS -45

 9.1. Size:337K  st
stw10nc60 sth10nc60fi.pdf

STH1061 STH1061

STW10NC60STH10NC60FIN-CHANNEL 600V - 0.6 - 10A - TO-247/ISOWATT218PowerMeshII MOSFETTYPE VDSS RDS(on) IDSTW10NC60 600 V

 9.2. Size:243K  st
sth10n.pdf

STH1061 STH1061

STH10NA50/FISTW10NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTH10NA50 500 V

 9.3. Size:386K  st
sth10na50.pdf

STH1061 STH1061

STH10NA50/FISTW10NA50N - CHANNEL ENHANCEMENT MODEFAST POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTH10NA50 500 V

Datasheet: HA9079 , HA9500 , HA9501 , HA9502 , HA9531 , HA9531A , HA9532 , HA9532A , 2222A , HCT2907A , HCT2907M , HDA412 , HDA420 , HDA496 , HEP637 , HEPG0001 , HEPG0002 .

 

 
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