2SD0814A Specs and Replacement
Type Designator: 2SD0814A
SMD Transistor Code: LQ_LR_LS
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 185 V
Maximum Collector-Emitter Voltage |Vce|: 185 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 150 MHz
Collector Capacitance (Cc): 2.3 pF
Forward Current Transfer Ratio (hFE), MIN: 90
Package: SC59
2SD0814A Substitution
- BJT ⓘ Cross-Reference Search
2SD0814A datasheet
Transistors 2SD0814A (2SD814A) Silicon NPN epitaxial planar type For high breakdown voltage low-frequency and low-noise Unit mm amplification 0.40+0.10 0.05 0.16+0.10 0.06 3 Features High collector-emitter voltage (Base open) VCEO Low noise voltage NV 1 2 Mini type package, allowing downsizing of the equipment and (0.95) (0.95) automatic insertion through... See More ⇒
Detailed specifications: FJAF6810D, FJAF6812, FJAF6815, FJAF6820, FJAF6910, FJAF6920, FJAFS1510A, FJAFS1720, C5198, PJ2N9014CT, PJ2N9014CX, NTE284, NTE285, NTE377, NTE378, 2SC5657, KT867A
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