All Transistors. L2SA812QLT1G Datasheet

 

L2SA812QLT1G Datasheet and Replacement


   Type Designator: L2SA812QLT1G
   SMD Transistor Code: M8
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.2 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 180 MHz
   Collector Capacitance (Cc): 4.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 120
   Noise Figure, dB: -
   Package: SOT23
 

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L2SA812QLT1G Datasheet (PDF)

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 l2sa812qlt1g.pdf pdf_icon

L2SA812QLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsL2SA812QLT1G SeriesFEATURES-L2SA812QLT1G Series High Voltage: VCEO = -50 V. Epitaxial planar type. NPN complement: L2SC1623 We declare that the material of product compliance with RoHS requirements. 3S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualifie

 ..2. Size:193K  lrc
 l2sa812qlt1g l2sa812qlt3g l2sa812rlt1g l2sa812rlt3g l2sa812slt3g l2sa812slt1g.pdf pdf_icon

L2SA812QLT1G

LESHAN RADIO COMPANY, LTD.L2SA812QLT1G SeriesGeneral Purpose TransistorsFEATURES-L2SA812QLT1G Series High Voltage: VCEO = -50 V. Epitaxial planar type. NPN complement: L2SC16233 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requirements; AEC-Q101 Qu

 ..3. Size:193K  lrc
 l2sa812qlt1g l2sa812rlt1g l2sa812slt3g l2sa812slt1g.pdf pdf_icon

L2SA812QLT1G

LESHAN RADIO COMPANY, LTD.L2SA812QLT1G SeriesGeneral Purpose TransistorsFEATURES-L2SA812QLT1G Series High Voltage: VCEO = -50 V. Epitaxial planar type. NPN complement: L2SC16233 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1and Control Change Requirements; AEC-Q101 Qu

 7.1. Size:191K  lrc
 l2sa812slt1g.pdf pdf_icon

L2SA812QLT1G

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsFEATURE L2SA812QLT1G Series High Voltage: VCEO = -50 V.S-L2SA812QLT1G Series Epitaxial planar type. NPN complement: L2SC1623 We declare that the material of product compliance with RoHS requirements. 3S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualifi

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Datasheet: L2SA1576AQT1G , L2SA1576ART1G , L2SA1576AST1G , L2SA1774QT1G , L2SA1774RT1G , L2SA1774ST1G , L2SA2029QM3T5G , L2SA2029RM3T5G , MJE340 , L2SA812RLT1G , L2SA812SLT1G , L2SB1197KQLT1G , L2SB1197KRLT1G , L2SB772P , L2SB772Q , L2SC1623QLT1G , L2SC1623RLT1G .

History: T1344 | TSA124ENND03 | TIP545 | 2SC4275 | KT8126B1 | AC107N | 2SD1757

Keywords - L2SA812QLT1G transistor datasheet

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