L2SA812QLT1G Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: L2SA812QLT1G

Código: M8

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.15 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 180 MHz

Capacitancia de salida (Cc): 4.5 pF

Ganancia de corriente contínua (hFE): 120

Encapsulados: SOT23

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L2SA812QLT1G datasheet

 ..1. Size:187K  lrc
 l2sa812qlt1g.pdf pdf_icon

L2SA812QLT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SA812QLT1G Series FEATURE S-L2SA812QLT1G Series High Voltage VCEO = -50 V. Epitaxial planar type. NPN complement L2SC1623 We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualifie

 ..2. Size:193K  lrc
 l2sa812qlt1g l2sa812qlt3g l2sa812rlt1g l2sa812rlt3g l2sa812slt3g l2sa812slt1g.pdf pdf_icon

L2SA812QLT1G

LESHAN RADIO COMPANY, LTD. L2SA812QLT1G Series General Purpose Transistors FEATURE S-L2SA812QLT1G Series High Voltage VCEO = -50 V. Epitaxial planar type. NPN complement L2SC1623 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requirements; AEC-Q101 Qu

 ..3. Size:193K  lrc
 l2sa812qlt1g l2sa812rlt1g l2sa812slt3g l2sa812slt1g.pdf pdf_icon

L2SA812QLT1G

LESHAN RADIO COMPANY, LTD. L2SA812QLT1G Series General Purpose Transistors FEATURE S-L2SA812QLT1G Series High Voltage VCEO = -50 V. Epitaxial planar type. NPN complement L2SC1623 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requirements; AEC-Q101 Qu

 7.1. Size:191K  lrc
 l2sa812slt1g.pdf pdf_icon

L2SA812QLT1G

LESHAN RADIO COMPANY, LTD. General Purpose Transistors FEATURE L2SA812QLT1G Series High Voltage VCEO = -50 V. S-L2SA812QLT1G Series Epitaxial planar type. NPN complement L2SC1623 We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualifi

MOSTRAR MÁS

Otros transistores... L2SA1576AQT1G, L2SA1576ART1G, L2SA1576AST1G, L2SA1774QT1G, L2SA1774RT1G, L2SA1774ST1G, L2SA2029QM3T5G, L2SA2029RM3T5G, 2SC4793, L2SA812RLT1G, L2SA812SLT1G, L2SB1197KQLT1G, L2SB1197KRLT1G, L2SB772P, L2SB772Q, L2SC1623QLT1G, L2SC1623RLT1G