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MJE340 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MJE340
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 20 W
   Tensión colector-base (Vcb): 300 V
   Tensión colector-emisor (Vce): 300 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 10 MHz
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO126
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MJE340 Datasheet (PDF)

 ..1. Size:594K  st
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MJE340

MJE340MJE350Complementary silicon power transistorsFeatures STMicroelectronics preferred salestypes Complementary NPN - PNP devicesApplications Linear and switching industrial equipment321DescriptionSOT-32The MJE340 is a silicon planar NPN transistor intended for use in medium power linear and switching applications. It is mounted in SOT-32.The complemen

 ..2. Size:37K  fairchild semi
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MJE340

MJE340High Voltage General Purpose Applications High Collector-Emitter Breakdown Voltage Suitable for Transformer Complement to MJE350TO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 VVEBO

 ..3. Size:238K  cdil
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MJE340

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL SILICON POWER TRANSISTOR MJE340TO126 Plastic PackageECBFor use in High Voltage General Purpose ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector Emitter Voltage VCEO 300 VCollector Base Voltage VCBO 300 VVEBOEmitter Base Voltage 3.0 VICC

 ..4. Size:212K  inchange semiconductor
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MJE340

isc Silicon NPN Power Transistor MJE340DESCRIPTIONCollectorEmitter Sustaining Voltage-: V = 300 V(Min)CEO(SUS)DC Current Gain-: h = 100(Min) @ I = 50mAFE CLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 50mACE(sat) CComplement to the PNP MJE350Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP31 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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