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MJE340 Specs and Replacement

The MJE340 is a high-voltage NPN bipolar junction transistor widely used in linear power stages and switching applications. It features a collector-emitter voltage rating of 300V, making it suitable for driving high-voltage loads, regulator circuits, audio amplifier stages. With a continuous collector current of 0.5A and power dissipation up to 20W when properly heat-sunk, the device offers solid thermal stability. The MJE340 provides a DC current gain of 30-240, enabling reliable amplification in medium-power designs. Its TO126 package ensures compact mounting and adequate heat transfer, making the transistor a dependable choice for high-voltage, moderate-current applications.


   Type Designator: MJE340
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 20 W
   Maximum Collector-Base Voltage |Vcb|: 300 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 10 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO126

 MJE340 Transistor Equivalent Substitute - Cross-Reference Search

   

MJE340 detailed specifications

 ..1. Size:594K  st
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MJE340

MJE340 MJE350 Complementary silicon power transistors Features STMicroelectronics preferred salestypes Complementary NPN - PNP devices Applications Linear and switching industrial equipment 3 2 1 Description SOT-32 The MJE340 is a silicon planar NPN transistor intended for use in medium power linear and switching applications. It is mounted in SOT-32. The complemen... See More ⇒

 ..2. Size:37K  fairchild semi
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MJE340

MJE340 High Voltage General Purpose Applications High Collector-Emitter Breakdown Voltage Suitable for Transformer Complement to MJE350 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO... See More ⇒

 ..3. Size:238K  cdil
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MJE340

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTOR MJE340 TO126 Plastic Package E C B For use in High Voltage General Purpose Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector Emitter Voltage VCEO 300 V Collector Base Voltage VCBO 300 V VEBO Emitter Base Voltage 3.0 V IC C... See More ⇒

 ..4. Size:212K  inchange semiconductor
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MJE340

isc Silicon NPN Power Transistor MJE340 DESCRIPTION Collector Emitter Sustaining Voltage- V = 300 V(Min) CEO(SUS) DC Current Gain- h = 100(Min) @ I = 50mA FE C Low Collector Saturation Voltage- V = 1.0V(Max.)@ I = 50mA CE(sat) C Complement to the PNP MJE350 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed... See More ⇒

Detailed specifications: MJE3311 , MJE3312 , MJE3370 , MJE3371 , MJE33A , MJE33B , MJE33C , MJE34 , 2SC5200 , MJE340K , MJE341 , MJE341K , MJE3439 , MJE344 , MJE3440 , MJE344K , MJE345 .

History: 2T6551 | 2SC4082 | 2SC4081

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