All Transistors. MJE340 Datasheet

 

MJE340 Datasheet, Equivalent, Cross Reference Search

Type Designator: MJE340

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 300 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 10 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO126

MJE340 Transistor Equivalent Substitute - Cross-Reference Search

 

MJE340 Datasheet (PDF)

..1. mje340 mje350.pdf Size:501K _st

MJE340
MJE340

MJE340MJE350COMPLEMETARY SILICON POWER TRANSISTORS STMicroelectronics PREFERREDSALESTYPES COMPLEMENTARY PNP - NPN DEVICESAPPLICATIONS LINEAR AND SWITCHING INDUSTRIALEQUIPMENT DESCRIPTION 12The MJE340 is a Silicon Epitaxial Planar NPN3transistor intended for use in medium powerlinear and switching applications. It is mounted inSOT-32.SOT-32The complementa

..2. mje340.pdf Size:37K _fairchild_semi

MJE340
MJE340

MJE340High Voltage General Purpose Applications High Collector-Emitter Breakdown Voltage Suitable for Transformer Complement to MJE350TO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 VVEBO

..3. mje340.pdf Size:238K _cdil

MJE340
MJE340

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL SILICON POWER TRANSISTOR MJE340TO126 Plastic PackageECBFor use in High Voltage General Purpose ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector Emitter Voltage VCEO 300 VCollector Base Voltage VCBO 300 VVEBOEmitter Base Voltage 3.0 VICC

..4. mje340.pdf Size:212K _inchange_semiconductor

MJE340
MJE340

isc Silicon NPN Power Transistor MJE340DESCRIPTIONCollectorEmitter Sustaining Voltage-: V = 300 V(Min)CEO(SUS)DC Current Gain-: h = 100(Min) @ I = 50mAFE CLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 50mACE(sat) CComplement to the PNP MJE350Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned

0.1. mje340re.pdf Size:117K _motorola

MJE340
MJE340

Order this documentMOTOROLAby MJE340/DSEMICONDUCTOR TECHNICAL DATAMJE340Plastic Medium Power NPN0.5 AMPERESilicon TransistorPOWER TRANSISTORNPN SILICON. . . useful for high voltag

0.2. mje340-mje350.pdf Size:66K _st

MJE340
MJE340

MJE340MJE350COMPLEMETARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICESAPPLICATIONS LINEAR AND SWITCHING INDUSTRIALEQUIPMENTDESCRIPTIONThe MJE340 is a silicon epitaxial planar NPN12transistor intended for use in medium power3linear and switching applications.It is mounted inSOT-32.The complementary PNP type is MJE350. S

 

 

 0.3. mje340-d.pdf Size:67K _onsemi

MJE340
MJE340

MJE340Plastic Medium-PowerNPN Silicon TransistorThis device is useful for high-voltage general purpose applications.Featureshttp://onsemi.com Suitable for Transformerless, Line-Operated Equipment Thermopad Construction Provides High Power Dissipation Rating0.5 AMPEREfor High Reliability Pb-Free Package is Available*POWER TRANSISTORNPN SILICON300 VOLTS, 20 WATT

0.4. mje340g.pdf Size:67K _onsemi

MJE340
MJE340

MJE340Plastic Medium-PowerNPN Silicon TransistorThis device is useful for high-voltage general purpose applications.Featureshttp://onsemi.com Suitable for Transformerless, Line-Operated Equipment Thermopad Construction Provides High Power Dissipation Rating0.5 AMPEREfor High Reliability Pb-Free Package is Available*POWER TRANSISTORNPN SILICON300 VOLTS, 20 WATT

 

 0.5. mje340t.pdf Size:208K _inchange_semiconductor

MJE340
MJE340

isc Silicon NPN Power Transistor MJE340TDESCRIPTIONCollectorEmitter Sustaining Voltage-: V = 300 V(Min)CEO(SUS)DC Current Gain-: h = 100(Min) @ I = 50mAFE CLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 50mACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage and general p

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 2SC945 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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