All Transistors. MJE340 Datasheet

 

MJE340 Datasheet, Equivalent, Cross Reference Search

Type Designator: MJE340

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 20 W

Maximum Collector-Base Voltage |Vcb|: 300 V

Maximum Collector-Emitter Voltage |Vce|: 300 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 10 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO126

MJE340 Transistor Equivalent Substitute - Cross-Reference Search

 

MJE340 Datasheet (PDF)

 ..1. Size:594K  st
mje340 mje350.pdf

MJE340
MJE340

MJE340MJE350Complementary silicon power transistorsFeatures STMicroelectronics preferred salestypes Complementary NPN - PNP devicesApplications Linear and switching industrial equipment321DescriptionSOT-32The MJE340 is a silicon planar NPN transistor intended for use in medium power linear and switching applications. It is mounted in SOT-32.The complemen

 ..2. Size:37K  fairchild semi
mje340.pdf

MJE340
MJE340

MJE340High Voltage General Purpose Applications High Collector-Emitter Breakdown Voltage Suitable for Transformer Complement to MJE350TO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 VVEBO

 ..3. Size:238K  cdil
mje340.pdf

MJE340
MJE340

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN EPITAXIAL SILICON POWER TRANSISTOR MJE340TO126 Plastic PackageECBFor use in High Voltage General Purpose ApplicationsABSOLUTE MAXIMUM RATINGSDESCRIPTION SYMBOL VALUE UNITCollector Emitter Voltage VCEO 300 VCollector Base Voltage VCBO 300 VVEBOEmitter Base Voltage 3.0 VICC

 ..4. Size:212K  inchange semiconductor
mje340.pdf

MJE340
MJE340

isc Silicon NPN Power Transistor MJE340DESCRIPTIONCollectorEmitter Sustaining Voltage-: V = 300 V(Min)CEO(SUS)DC Current Gain-: h = 100(Min) @ I = 50mAFE CLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 50mACE(sat) CComplement to the PNP MJE350Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned

 0.1. Size:117K  motorola
mje340re.pdf

MJE340
MJE340

Order this documentMOTOROLAby MJE340/DSEMICONDUCTOR TECHNICAL DATAMJE340Plastic Medium Power NPN0.5 AMPERESilicon TransistorPOWER TRANSISTORNPN SILICON. . . useful for high voltag

 0.2. Size:66K  st
mje340-mje350.pdf

MJE340
MJE340

MJE340MJE350COMPLEMETARY SILICON POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICESAPPLICATIONS LINEAR AND SWITCHING INDUSTRIALEQUIPMENTDESCRIPTIONThe MJE340 is a silicon epitaxial planar NPN12transistor intended for use in medium power3linear and switching applications.It is mounted inSOT-32.The complementary PNP type is MJE350. S

 0.3. Size:67K  onsemi
mje340-d.pdf

MJE340
MJE340

MJE340Plastic Medium-PowerNPN Silicon TransistorThis device is useful for high-voltage general purpose applications.Featureshttp://onsemi.com Suitable for Transformerless, Line-Operated Equipment Thermopad Construction Provides High Power Dissipation Rating0.5 AMPEREfor High Reliability Pb-Free Package is Available*POWER TRANSISTORNPN SILICON300 VOLTS, 20 WATT

 0.4. Size:67K  onsemi
mje340g.pdf

MJE340
MJE340

MJE340Plastic Medium-PowerNPN Silicon TransistorThis device is useful for high-voltage general purpose applications.Featureshttp://onsemi.com Suitable for Transformerless, Line-Operated Equipment Thermopad Construction Provides High Power Dissipation Rating0.5 AMPEREfor High Reliability Pb-Free Package is Available*POWER TRANSISTORNPN SILICON300 VOLTS, 20 WATT

 0.5. Size:208K  inchange semiconductor
mje340t.pdf

MJE340
MJE340

isc Silicon NPN Power Transistor MJE340TDESCRIPTIONCollectorEmitter Sustaining Voltage-: V = 300 V(Min)CEO(SUS)DC Current Gain-: h = 100(Min) @ I = 50mAFE CLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 50mACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage and general p

Datasheet: BC507FA , BC507FB , BC508 , BC508A , BC508B , BC508C , BC508F , BC508FA , 2SA1943 , BC508FC , BC509 , BC509B , BC509C , BC509F , BC509FB , BC509FC , BC510 .

 

 
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